Биполярный транзистор 2N5781 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2N5781
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 10 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 65 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 3.5 A
Предельная температура PN-перехода (Tj): 200 °C
Граничная частота коэффициента передачи тока (ft): 8 MHz
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора: TO5
2N5781 Datasheet (PDF)
2n5781.pdf
2N5781Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar PNP Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 80V dia.IC = 3.5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1
2n5781xl.pdf
2N5781XLDimensions in mm (inches). 8.51 (0.34)9.40 (0.37)Bipolar PNP Device in a 7.75 (0.305)8.51 (0.335)Hermetically sealed TO5 Metal Package. 6.10 (0.240)6.60 (0.260)0.89 (0.035)max.38.00 Bipolar PNP Device. (1.5)0.41 (0.016)min.0.53 (0.021)dia.VCEO = 80V 5.08 (0.200)IC = 3.5A typ.2.54All Semelab hermetically sealed products 2(0.100)1 3 ca
2n5783 2n5786.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n5786l.pdf
SILICON NPN TRANSISTOR 2N5786L Low Saturation Voltage. High Gain At High Current. Hermetic TO5 (TO-205AA) Metal Package. Ideally suited for General Purpose Amplifier Applications. High Reliability and Space Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO Collector Base Voltage 45V VCER RBE = 100 Collect
2n5784smd.pdf
2N5784SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 80V IC = 3.5A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26
2n5785smd.pdf
2N5785SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 65V IC = 3.5A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26
2n5785.pdf
2N5785Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 65V dia.IC = 3.5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1
2n5782l.pdf
2N5782LDimensions in mm (inches). 8.51 (0.34)9.40 (0.37)Bipolar PNP Device in a 7.75 (0.305)8.51 (0.335)Hermetically sealed TO5 Metal Package. 6.10 (0.240)6.60 (0.260)0.89 (0.035)max.38.00 Bipolar PNP Device. (1.5)0.41 (0.016)min.0.53 (0.021)dia.VCEO = 65V 5.08 (0.200)IC = 3.5A typ.2.54All Semelab hermetically sealed products 2(0.100)1 3 can
2n5784.pdf
2N5784MECHANICAL DATADimensions in mm (inches)8.89 (0.35)9.40 (0.37)7.75 (0.305)SILICON EPITAXIAL8.51 (0.335)NPN TRANSISTOR4.19 (0.165)4.95 (0.195)0.89max.FEATURES(0.035)12.70(0.500)7.75 (0.305)min.General purpose power transistor for8.51 (0.335)dia.switching and linear applications in ahermetic TO39 package.5.08 (0.200)typ.2.542(0.100)
2n5785smd05.pdf
2N5785SMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 65V IC = 3.5A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab he
2n5785n1.pdf
NPN SILICON SWITCHING TRANSISTOR 2N5785N1 Hermetic SMD0.5 Metal package. Ideally Suited for Linear Amplifier and Switching Applications. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO Collector Base Voltage 65V VCEO Collector Emitter Voltage 50V VEBO Emitter Base Voltage 5V IC Continuous Collecto
2n5784smd05.pdf
2N5784SMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 80V IC = 3.5A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab he
Другие транзисторы... 2N5770 , 2N5771 , 2N5772 , 2N5773 , 2N5774 , 2N5775 , 2N5776 , 2N578 , 2SD669A , 2N5782 , 2N5783 , 2N5784 , 2N5784SM , 2N5785 , 2N5785SM , 2N5786 , 2N579 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050