2SA1891 Datasheet. Equivalente

 ..1. Size:128K  toshiba
 2sa1891.pdf

 8.1. Size:205K  toshiba
 2sa1893.pdf

 8.2. Size:224K  toshiba
 2sa1892.pdf

 8.3. Size:180K  toshiba
 2sa1899.pdf

 8.4. Size:86K  sanyo
 2sa1896.pdf

Ordering number 4718A PNP Epitaxial Planar Silicon Transistor 2SA1896 DC/DC Converter, Motor Driver Applications Features Package Dimensions Adoption of FBET processes. unit mm Large current capacity. 2038A Low collector-to-emitter saturation voltage. [2SA1896] Small size making it easy to provide high-density, small-sized hybrid ICs. 1 Base 2 Collector 3 Em

 8.5. Size:97K  sanyo
 2sa1898.pdf

Ordering number 5049 PNP Epitaxial Planar Silicon Transistor 2SA1898 DC/DC Converter Application Applications Package Dimensions High-speed switching. unit mm 2038A Features [2SA1898] Adoption of FBET and MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage. Fast switching speed. 1 Base 2 Collector 3 Emitter SANYO PCP (Bo

 8.6. Size:107K  nec
 2sa1897.pdf

DATA SHEET SILICON TRANSISTOR 2SA1897 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SA1897 features a low saturation voltage and is available PACKAGE DRAWING (UNIT mm) for high current control in small dimension. This transistor is ideal for high efficiency DC/DC converters due to fast switching speed. FEATURES High current capaci

 8.7. Size:41K  panasonic
 2sa1890 e.pdf

Transistor 2SA1890 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SC5026 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. 45 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazi

 8.8. Size:37K  panasonic
 2sa1890.pdf

Transistor 2SA1890 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SC5026 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. 45 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazi

 8.9. Size:1170K  kexin
 2sa1896.pdf

SMD Type Transistors PNP Transistors 2SA1896 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-2.5A Collector Emitter Voltage VCEO=-20V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltag

 8.10. Size:886K  kexin
 2sa1890.pdf

SMD Type Transistors PNP Transistors 2SA1890 Features 1.70 0.1 Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. Complementary to 2SC5026. 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage

 8.11. Size:1137K  kexin
 2sa1898.pdf

SMD Type Transistors PNP Transistors 2SA1898 1.70 0.1 Features Large current capacity. Low collector-to-emitter saturation voltage. 0.42 0.1 0.46 0.1 Fast switching speed. 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -15 Collector - Emitter Voltage VCEO -15 V Emitter - Base