2SA1891 - параметры, поиск аналогов, даташиты транзистора

Биполярный транзистор 2SA1891 Даташит. Аналоги

   Наименование производителя: 2SA1891
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 1.3 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 2 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Ёмкость коллекторного перехода (Cc): 23 pf
   Статический коэффициент передачи тока (hfe): 120
   Корпус транзистора: TPS

Аналог (замена) для 2SA1891

- подбор ⓘ биполярного транзистора по параметрам

2SA1891 Datasheet (PDF)

..1. Size:128K toshiba
2sa1891.pdf pdf_icon

8.1. Size:205K toshiba
2sa1893.pdf pdf_icon

8.2. Size:224K toshiba
2sa1892.pdf pdf_icon

8.3. Size:180K toshiba
2sa1899.pdf pdf_icon

8.4. Size:86K sanyo
2sa1896.pdf pdf_icon

Ordering number:4718APNP Epitaxial Planar Silicon Transistor2SA1896DC/DC Converter, Motor Driver ApplicationsFeatures Package Dimensions Adoption of FBET processes.unit:mm Large current capacity.2038A Low collector-to-emitter saturation voltage.[2SA1896] Small size making it easy to provide high-density,small-sized hybrid ICs.1 : Base2 : Collector3 : Em

8.5. Size:97K sanyo
2sa1898.pdf pdf_icon

Ordering number:5049PNP Epitaxial Planar Silicon Transistor2SA1898DC/DC Converter ApplicationApplications Package Dimensions High-speed switching. unit:mm2038AFeatures [2SA1898] Adoption of FBET and MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage. Fast switching speed.1 : Base2 : Collector3 :EmitterSANYO : PCP(Bo

8.6. Size:107K nec
2sa1897.pdf pdf_icon

DATA SHEETSILICON TRANSISTOR2SA1897PNP SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHINGThe 2SA1897 features a low saturation voltage and is available PACKAGE DRAWING (UNIT: mm)for high current control in small dimension. This transistor is idealfor high efficiency DC/DC converters due to fast switching speed.FEATURES High current capaci

8.7. Size:41K panasonic
2sa1890 e.pdf pdf_icon

Transistor2SA1890Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SC50261.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).High collector to emitter voltage VCEO.45Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazi

8.8. Size:37K panasonic
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8.9. Size:1170K kexin
2sa1896.pdf pdf_icon

SMD Type TransistorsPNP Transistors2SA1896SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-2.5A Collector Emitter Voltage VCEO=-20V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltag

8.10. Size:886K kexin
2sa1890.pdf pdf_icon

SMD Type TransistorsPNP Transistors2SA1890 Features1.70 0.1 Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. Complementary to 2SC5026.0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage

8.11. Size:1137K kexin
2sa1898.pdf pdf_icon

SMD Type TransistorsPNP Transistors2SA18981.70 0.1 Features Large current capacity. Low collector-to-emitter saturation voltage.0.42 0.10.46 0.1 Fast switching speed.1.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -15 Collector - Emitter Voltage VCEO -15 V Emitter - Base

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