2SC5196 Todos los transistores

Introduzca al menos 3 números o letras

2SC5196 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC5196

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 60 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 30 MHz

Capacitancia de salida (Cc): 75 pF

Ganancia de corriente contínua (hfe): 55

Empaquetado / Estuche: TO3PN

Búsqueda de reemplazo de transistor bipolar 2SC5196

2SC5196 Datasheet (PDF)

1.1. 2sc5196.pdf Size:170K _toshiba

2SC5196
2SC5196

1.2. 2sc5196.pdf Size:237K _inchange_semiconductor

2SC5196
2SC5196

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5196 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Min) @IC= 5A ·Good Linearity of hFE ·Complement to Type 2SA1939 APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(

4.1. 2sc5198b.pdf Size:208K _update

2SC5196
2SC5196

RoHS 2SC5198B Series RoHS SEMICONDUCTOR Nell High Power Products Silicon NPN triple diffusion planar transistor 10A/140V/100W 15.6±0.4 4.8±0.2 9.6 2.0±0.1 Φ3.2±0,1 2 TO-3P(B) 3 +0.2 +0.2 0.65 1.05 -0.1 -0.1 FEATURES High breakdown voltage, VCEO =140V (min) 5.45±0.1 5.45±0.1 1.4 Complementary to 2SA1941B B C E TO-3P package which can be installed to the heat

4.2. 2sc5198.pdf Size:148K _toshiba

2SC5196
2SC5196

2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 140 V (min) Complementary to 2SA1941 Suitable for use in 70-W high fidelity audio amplifiers output stage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 140 V Collector-emitter voltag

4.3. 2sc5197.pdf Size:171K _toshiba

2SC5196
2SC5196

4.4. 2sc5199.pdf Size:170K _toshiba

2SC5196
2SC5196

4.5. 2sc5191.pdf Size:56K _nec

2SC5196
2SC5196

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5191 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES Low Voltage Operation, Low Phase Distortion Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Collector Current IC = 100 mA 3-pin mini

4.6. 2sc5195.pdf Size:54K _nec

2SC5196
2SC5196

DATA SHEET SILICON TRANSISTOR 2SC5195 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DRAWINGS Low Voltage Operation, Low Phase Distortion (Unit: mm) Low Noise 1.60.1 NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz 0.80.1 NF = 1.5 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz 2 Large Absolute Maximum Collector Current IC = 100 mA Supercompact M

4.7. 2sc5194.pdf Size:65K _nec

2SC5196
2SC5196

DATA SHEET SILICON TRANSISTOR 2SC5194 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DRAWINGS Low Voltage Operation, Low Phase Distortion (Unit: mm) Low Noise 2.10.2 NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz 1.250.1 NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Collector Current IC = 100 mA 4-Pin Compact Mi

4.8. 2sc5193.pdf Size:55K _nec

2SC5196
2SC5196

DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC5193 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD FEATURES PACKAGE DRAWING (Units: mm) Low Voltage Operation, Low Phase Distortion Low Noise 2.10.1 NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz 1.250.1 NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Collector Curre

4.9. 2sc5192.pdf Size:68K _nec

2SC5196
2SC5196

DATA SHEET SILICON TRANSISTOR 2SC5192 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DRAWINGS Low Voltage Operation, Low Phase Distortion (Unit: mm) Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz +0.2 2.8 0.3 +0.2 NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz 1.5 0.1 Large Absolute Maximum Collector Current I

4.10. 2sc5190_e.pdf Size:40K _panasonic

2SC5196
2SC5196

Transistor 2SC5190 Silicon NPN epitaxial planer type For low-voltage high-frequency amplification Unit: mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. Small collector output capacitance Cob. 1 S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings (Ta=

4.11. 2sc5190.pdf Size:37K _panasonic

2SC5196
2SC5196

Transistor 2SC5190 Silicon NPN epitaxial planer type For low-voltage high-frequency amplification Unit: mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. Small collector output capacitance Cob. 1 S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings (Ta=

4.12. 2sc5198.pdf Size:287K _inchange_semiconductor

2SC5196
2SC5196

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5198 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Min) @IC= 7A ·Good Linearity of hFE ·Complement to Type 2SA1941 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(

4.13. 2sc5197.pdf Size:284K _inchange_semiconductor

2SC5196
2SC5196

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5197 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Min) @IC= 6A ·Good Linearity of hFE ·Complement to Type 2SA1940 APPLICATIONS ·Power amplifier applications ·Recommend for 55W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(

4.14. 2sc5199.pdf Size:137K _inchange_semiconductor

2SC5196
2SC5196

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5199 DESCRIPTION ·With TO-3PL package ·Complement to type 2SA1942 APPLICATIONS ·Power amplifier applications ·Recommended for 80W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) an

4.15. 2sc5191.pdf Size:933K _kexin

2SC5196
2SC5196

SMD Type Transistors NPN Transistors 2SC5191 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=100mA 1 2 ● Collector Emitter Voltage VCEO=6V +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 9 Collector

Otros transistores... 2SC5076 , 2SC5122 , 2SC5154 , 2SC5171 , 2SC5172 , 2SC5173 , 2SC5174 , 2SC5176 , 2N2905 , 2SC5197 , 2SC5198 , 2SC5199 , 2SC5201 , 2SC5208 , 2SC5242 , 2SC5266A , 2SC5279 .

 


2SC5196
  2SC5196
  2SC5196
  2SC5196
 
2SC5196
  2SC5196
  2SC5196
  2SC5196
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: PT9790 | PT9734 | PT9732 | PT9731 | PT9730 | PT23T9014 | PT23T9013 | PT23T8550 | PT23T8050 | PT23T5551 | PT23T5401 | PT23T3906 | PT23T3904 | PT23T2907A | PT23T2222A | PT236T30E2M | PT236T30E2H | PT236T30E2 | PQMD12 | PPT8N30E2 |


Introduzca al menos 1 números o letras