2SC5738 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC5738
Código: WD
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.625 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 3.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 18 pF
Ganancia de corriente contínua (hfe): 400
Paquete / Cubierta: TSM
Búsqueda de reemplazo de transistor bipolar 2SC5738
2SC5738 Datasheet (PDF)
2sc5738.pdf
2SC5738 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5738 Industrial Applications High-Speed Switching Applications Unit: mm DC-DC Converter Applications High DC current gain: hFE = 400 to 1000 (I = 0.5 A) C Low collector-emitter saturation voltage: V = 0.15 V (max) CE (sat) High-speed switching: t = 90 ns (typ.) fMaximum Ratings (Ta == 25C) ==
2sc5737.pdf
DATA SHEETNPN SILICON RF TRANSISTOR2SC5737NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW NOISEFLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLDFEATURES Low voltage operation, low phase distortion Ideal for VCO applications Flat-lead 3-pin thin-type ultra super minimold packageORDERING INFORMATIONPart Number Quantity Supplying Form2SC5737 50 pcs (Non reel) 8 mm
2sc5736.pdf
DATA SHEETNPN SILICON RF TRANSISTOR2SC5736NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW NOISEFLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLDFEATURES Low voltage operation, low phase distortion Ideal for OSC applications Flat-lead 3-pin thin-type ultra super minimold packageORDERING INFORMATIONPart Number Quantity Supplying Form2SC5736 50 pcs (Non reel) 8 mm
2sc5730k.pdf
2SC5730K Transistors Medium power transistor (30V, 1A) 2SC5730K External dimensions (Unit : mm) Features 1) High speed switching. SMT3(Tf : Typ. : 50ns at IC = 1.0A) (SC-59)2) Low saturation voltage, typically :(Typ. 150mV at IC = 500mA, IB = 50mA) 1.63) Strong discharge power for inductive load and 2.8capacitance load. (1) Emitter4) Complements th
2sc5730.pdf
2SC5730 Transistor Medium power transistor (30V, 1.0A) 2SC5730 External dimensions (Units : mm) Features 1) High speed switching. (Tf : Typ. : 35ns at IC = 1.0A) 2.8TSMT31.62) Low saturation voltage, typically (Typ. : 150mV at IC = 500mA, IB = 50mA) 3) Strong discharge power for inductive load and capacitance load. (1) Base(2) Emitter4) Complements the 2SA2048
2sc5739.pdf
Power Transistors2SC5739Silicon NPN epitaxial planar typeUnit: mm4.60.2Power supply for Audio & Visual equipments 9.90.32.90.2such as TVs and VCRs 3.20.1Industrial equipments such as DC-DC converters Features High-speed switching (tstg: storage time/tf: fall time is short)1.40.2 Low collector-emitter saturation voltage VCE(sat) 2.60.11.60.2
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
