2SC5738 - описание и поиск аналогов

2SC5738 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5738 Industrial Applications High-Speed Switching Applications Unit mm DC-DC Converter Applications High DC current gain hFE = 400 to 1000 (I = 0.5 A) C Low collector-emitter saturation voltage V = 0.15 V (max) CE (sat) High-speed switching t = 90 ns (typ.) f Maximum Ratings (Ta = = 25 C) = =

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5737 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Low voltage operation, low phase distortion Ideal for VCO applications Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5737 50 pcs (Non reel) 8 mm

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5736 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Low voltage operation, low phase distortion Ideal for OSC applications Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5736 50 pcs (Non reel) 8 mm

2SC5730K Transistors Medium power transistor (30V, 1A) 2SC5730K External dimensions (Unit mm) Features 1) High speed switching. SMT3 (Tf Typ. 50ns at IC = 1.0A) (SC-59) 2) Low saturation voltage, typically (Typ. 150mV at IC = 500mA, IB = 50mA) 1.6 3) Strong discharge power for inductive load and 2.8 capacitance load. (1) Emitter 4) Complements th

2SC5730 Transistor Medium power transistor (30V, 1.0A) 2SC5730 External dimensions (Units mm) Features 1) High speed switching. (Tf Typ. 35ns at IC = 1.0A) 2.8 TSMT3 1.6 2) Low saturation voltage, typically (Typ. 150mV at IC = 500mA, IB = 50mA) 3) Strong discharge power for inductive load and capacitance load. (1) Base (2) Emitter 4) Complements the 2SA2048

Power Transistors 2SC5739 Silicon NPN epitaxial planar type Unit mm 4.6 0.2 Power supply for Audio & Visual equipments 9.9 0.3 2.9 0.2 such as TVs and VCRs 3.2 0.1 Industrial equipments such as DC-DC converters Features High-speed switching (tstg storage time/tf fall time is short) 1.4 0.2 Low collector-emitter saturation voltage VCE(sat) 2.6 0.1 1.6 0.2