2SC5810 Todos los transistores

2SC5810 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5810 High-Speed Switching Applications Unit mm DC-DC Converter Applications Strobe Applications High DC current gain hFE = 400 to 1000 (I = 0.1 A) C Low collector-emitter saturation voltage V = 0.17 V (max) CE (sat) High-speed switching t = 85 ns (typ.) f Maximum Ratings (Ta = 25 C) Characteristi

2SC5819 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5819 Industrial Applications High-Speed Switching Applications Unit mm DC-DC Converter Applications High DC current gain hFE = 400 to 1000 (I = 0.15 A) C Low collector-emitter saturation voltage V = 0.12 V (max) CE (sat) High-speed switching t = 45 ns (typ.) f Maximum Ratings (Ta = = 25 C) = =

Transistors 2SC5813 Silicon NPN epitaxial planar type For DC-DC converter Unit mm 0.40+0.10 0.05 0.16+0.10 0.06 Features 3 Low collector-emitter saturation voltage VCE(sat) Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 1 2 (0.95) (0.95) 1.9 0.1 2.90+0.20 0.05 Absolute Maximum Ratings Ta = 25

2SC5812 Silicon NPN Epitaxial VHF/UHF wide band amplifier ADE-208-1468(Z) Rev.0 Nov. 2001 Features High power gain, Low noise figure at low power operation S21 2 = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz) Outline MFPAK 3 1 1. Emitter 2 2. Base 3. Collector Note Marking is WG . 2SC5812 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ra

SMALL-SIGNAL TRANSISTOR 2SC5814 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit 2SC5814 is a super mini package silicon NPN epitaxial type transistor. It is designed for low frequency voltage application. FEATURE Low collector to emitter saturation voltage. VCE(sat)=0.3V max(@IC=30mA, IB=1.5mA) Fac