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2SC6076 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC6076
   Código: C6076
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 10 W
   Tensión colector-base (Vcb): 160 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 9 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 150 MHz
   Capacitancia de salida (Cc): 14 pF
   Ganancia de corriente contínua (hfe): 180
   Paquete / Cubierta: NEW-PW-MOLD
 

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2SC6076 Datasheet (PDF)

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2SC6076

2SC6076 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6076 Power Amplifier Applications Unit: mmPower Switching Applications Low collector saturation voltage: VCE (sat) = 0.5 V (max) ( IC = 1A) High-speed switching: tstg = 0.4 s (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 160 VCollector-emitt

 ..2. Size:212K  inchange semiconductor
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2SC6076

isc Silicon NPN Power Transistor 2SC6076DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 160V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V =0.5V(Max) @I = 1ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower Amplifier ApplicationsPower Switching ApplicationsABSOLUTE MAXIMUM RATINGS(T =25

 8.1. Size:302K  toshiba
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2SC6076

2SC6077 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6077 Power Amplifier Applications Unit: mm Power Switching Applications Low collector saturation voltage: VCE (sat) = 0.5 V (max)IC = 1A High-speed switching: tstg = 0.4 s (typ) www.DataSheet4U.comAbsolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-ba

 8.2. Size:201K  toshiba
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2SC6076

2SC6075 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6075 Power Amplifier Applications Unit: mmPower Switching Applications Low collector emitter saturation voltage : VCE (sat) = 0.5 V (max)IC = 1A High-speed switching: tstg = 0.4 s (typ) www.DataSheet4U.comAbsolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 160

Otros transistores... 2SC6040 , 2SC6042 , 2SC6052 , 2SC6060 , 2SC6061 , 2SC6062 , 2SC6072 , 2SC6075 , BC558 , 2SC6077 , 2SC6078 , 2SC6079 , 2SC6087 , 2SC6124 , 2SC6125 , 2SC6126 , 2SC6127 .

History: 2SC1414 | KSP2907A | NST846BF3T5G | 2SCR513R

 

 
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