2SC6076
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC6076
SMD Transistor Code: C6076
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10
W
Maximum Collector-Base Voltage |Vcb|: 160
V
Maximum Collector-Emitter Voltage |Vce|: 80
V
Maximum Emitter-Base Voltage |Veb|: 9
V
Maximum Collector Current |Ic max|: 3
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 150
MHz
Collector Capacitance (Cc): 14
pF
Forward Current Transfer Ratio (hFE), MIN: 180
Noise Figure, dB: -
Package: NEW-PW-MOLD
2SC6076
Transistor Equivalent Substitute - Cross-Reference Search
2SC6076
Datasheet (PDF)
..1. Size:196K toshiba
2sc6076.pdf 
2SC6076 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6076 Power Amplifier Applications Unit: mmPower Switching Applications Low collector saturation voltage: VCE (sat) = 0.5 V (max) ( IC = 1A) High-speed switching: tstg = 0.4 s (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 160 VCollector-emitt
..2. Size:212K inchange semiconductor
2sc6076.pdf
isc Silicon NPN Power Transistor 2SC6076DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 160V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V =0.5V(Max) @I = 1ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower Amplifier ApplicationsPower Switching ApplicationsABSOLUTE MAXIMUM RATINGS(T =25
8.1. Size:302K toshiba
2sc6077.pdf
2SC6077 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6077 Power Amplifier Applications Unit: mm Power Switching Applications Low collector saturation voltage: VCE (sat) = 0.5 V (max)IC = 1A High-speed switching: tstg = 0.4 s (typ) www.DataSheet4U.comAbsolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-ba
8.2. Size:201K toshiba
2sc6075.pdf
2SC6075 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6075 Power Amplifier Applications Unit: mmPower Switching Applications Low collector emitter saturation voltage : VCE (sat) = 0.5 V (max)IC = 1A High-speed switching: tstg = 0.4 s (typ) www.DataSheet4U.comAbsolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 160
8.3. Size:259K toshiba
2sc6072.pdf
2SC6072 NPN 2SC6072 : mm :fT=200MHz() (Ta = 25C) VCBO V 180
8.4. Size:188K toshiba
2sc6079.pdf
2SC6079 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6079 Power Amplifier Applications Unit: mmPower Switching Applications Low collector saturation voltage: VCE (sat) = 0.5 V (max)IC = 1A High-speed switching: tstg = 0.4 s (typ) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 160 VCollector-emitter voltage VC
8.5. Size:270K toshiba
2sc6078.pdf
2SC6078 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6078 Power Amplifier Applications Unit: mm Power Switching Applications Low collector saturation voltage: VCE (sat) = 0.5 V (max)IC = 1A High-speed switching: tstg = 0.4 s (typ) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 160 V
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