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2SC6139 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC6139

Código: C6139

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1 W

Tensión colector-base (Vcb): 160 V

Tensión colector-emisor (Vce): 160 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 1.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 12 pF

Ganancia de corriente contínua (hFE): 140

Encapsulados: MSTM

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2SC6139 datasheet

 ..1. Size:185K  toshiba
2sc6139.pdf pdf_icon

2SC6139

2SC6139 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6139 Audio Frequency Amplifier Applications Unit mm High collector voltage VCEO = 160 V (min) Small collector output capacitance Cob = 12pF (typ.) High transition frequency fT = 100MHz (typ.) Complementary to 2SA2219 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Co

 8.1. Size:144K  toshiba
2sc6134.pdf pdf_icon

2SC6139

2CS6134 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6134 High-Speed Switching Applications Unit mm DC-DC Converter Applications 2.1 0.1 Strobe Applications 1.7 0.1 High DC current gain hFE = 250 to 400 (IC = 0.3A) 1 Low collector-emitter saturation voltage VCE (sat) = 0.14 V (max) 3 2 High-speed switching tf = 25 ns (typ.) Absolute Maximum Ratings (

 8.2. Size:191K  toshiba
2sc6136.pdf pdf_icon

2SC6139

2SC6136 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6136 High Voltage Switching Applications Unit mm Switching Regulator Applications DC-DC Converter Applications High speed switching tf = 0.18 s (typ.) (IC = 0.3 A) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 600 V Collector-emitter voltag

 8.3. Size:140K  toshiba
2sc6133.pdf pdf_icon

2SC6139

2SC6133 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6133 High-Speed Switching Applications Unit mm DC-DC Converter Applications 2.1 0.1 1.7 0.1 High DC current gain hFE = 400 to 1000 (IC = 0.15A) 1 Low collector-emitter saturation voltage VCE (sat) = 0.12 V (max) 3 2 High-speed switching tf = 45 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Char

Otros transistores... 2SC6078 , 2SC6079 , 2SC6087 , 2SC6124 , 2SC6125 , 2SC6126 , 2SC6127 , 2SC6136 , 2SB817 , 2SC6140 , 2SC6142 , TPC6501 , TPC6502 , TPC6503 , TPC6504 , TPC6601 , TPC6602 .

History: TPC6601

 

 

 


History: TPC6601

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