2SC6139 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC6139
SMD Transistor Code: C6139
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 140
Noise Figure, dB: -
Package: MSTM
2SC6139 Transistor Equivalent Substitute - Cross-Reference Search
2SC6139 Datasheet (PDF)
2sc6139.pdf
2SC6139 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6139 Audio Frequency Amplifier Applications Unit: mm High collector voltage : VCEO = 160 V (min) Small collector output capacitance : Cob = 12pF (typ.) High transition frequency : fT = 100MHz (typ.) Complementary to 2SA2219 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCo
2sc6134.pdf
2CS6134 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6134 High-Speed Switching Applications Unit: mmDC-DC Converter Applications 2.10.1Strobe Applications 1.70.1 High DC current gain: hFE = 250 to 400 (IC = 0.3A) 1 Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) 32 High-speed switching: tf = 25 ns (typ.) Absolute Maximum Ratings (
2sc6136.pdf
2SC6136 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6136 High Voltage Switching Applications Unit: mm Switching Regulator Applications DC-DC Converter Applications High speed switching: tf = 0.18 s (typ.) (IC = 0.3 A) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 600 VCollector-emitter voltag
2sc6133.pdf
2SC6133 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6133 High-Speed Switching Applications Unit: mmDC-DC Converter Applications 2.10.11.70.1 High DC current gain: hFE = 400 to 1000 (IC = 0.15A) 1 Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) 32 High-speed switching: tf = 45 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Char
2sc6135.pdf
2SC6135 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6135 High-Speed Switching Applications Unit: mmDC-DC Converter Applications 2.10.1Strobe Applications 1.70.11 High DC current gain: hFE = 400 to 1000 (IC = 0.1A) Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max) 32 High-speed switching: tf = 85 ns (typ.) Absolute Maximum Rating
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: 3DD13003H3D
History: 3DD13003H3D
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