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TPCP8507 Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPCP8507
   Código: 8507
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1.25 W
   Tensión colector-base (Vcb): 180 V
   Tensión colector-emisor (Vce): 120 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: PS8
 

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TPCP8507 datasheet

 ..1. Size:171K  toshiba
 tpcp8507.pdf pdf_icon

TPCP8507

TPCP8507 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8507 High-Speed Switching Applications Unit mm DC/DC Converters 0.33 0.05 0.05 M A 8 5 High DC current gain hFE = 120 300 (IC = 0.1 A) Low collector-emitter saturation voltage VCE(sat) = 0.14 V (max) High-speed switching tf = 0.2 s (typ.) 0.475 1 4 B 0.05 M B 0.65 2.9 0.1 Absolute Maximum ... See More ⇒

 7.1. Size:227K  toshiba
 tpcp8501.pdf pdf_icon

TPCP8507

TPCP8501 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8501 Switching Applications Unit mm DC-DC Converter Applications 0.33 0.05 0.05 M A 8 5 High DC current gain hFE = 100 to 300 (IC = 0.3 A) Low collector-emitter saturation VCE (sat) = 0.2 V (max) High-speed switching tf = 100 ns (typ.) 0.475 1 4 B 0.05 M B 0.65 Absolute Maximum Ratings (Ta =... See More ⇒

 7.2. Size:210K  toshiba
 tpcp8505.pdf pdf_icon

TPCP8507

TPCP8505 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) TPCP8505 High-Speed Switching Applications Unit mm DC-DC Converter Applications 0.33 0.05 0.05 M A 8 5 High DC current gain hFE = 400 to 1000 (IC = 0.3 A) Low collector-emitter saturation VCE (sat) = 0.14 V (max) High-speed switching tf = 120 ns (typ.) 0.475 1 4 B 0.05 M B 0.65 Absolu... See More ⇒

 7.3. Size:196K  toshiba
 tpcp8504.pdf pdf_icon

TPCP8507

TPCP8504 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8504 High Speed Switching Applications Unit mm DC-DC Converter Applications 0.33 0.05 0.05 M A 5 8 High DC current gain hFE = 400 to 1000 (IC = 0.2 A) Low collector-emitter saturation VCE (sat) = 0.12 V (max) High-speed switching tf = 25 ns (typ.) 0.475 1 4 B 0.05 M B 0.65 2.9 0.1 A 0... See More ⇒

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Otros transistores... TPC6602 , TPC6603 , TPC6604 , TPC6701 , TPC6D03 , TPCP8501 , TPCP8504 , TPCP8505 , BC556 , TPCP8510 , TPCP8511 , TPCP8601 , TPCP8602 , TPCP8603 , TPCP8604 , TPCP8701 , TPCP8901 .

 

 
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