All Transistors. TPCP8507 Datasheet

 

TPCP8507 Datasheet and Replacement


   Type Designator: TPCP8507
   SMD Transistor Code: 8507
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.25 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: PS8
 

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TPCP8507 Datasheet (PDF)

 ..1. Size:171K  toshiba
 tpcp8507.pdf pdf_icon

TPCP8507

TPCP8507 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8507 High-Speed Switching Applications Unit: mmDC/DC Converters 0.330.05 0.05 M A8 5 High DC current gain: hFE = 120~300 (IC = 0.1 A) Low collector-emitter saturation voltage: VCE(sat) = 0.14 V (max) High-speed switching: tf = 0.2 s (typ.) 0.475 1 4B 0.05 M B0.652.90.1Absolute Maximum

 7.1. Size:227K  toshiba
 tpcp8501.pdf pdf_icon

TPCP8507

TPCP8501 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8501 Switching Applications Unit: mmDC-DC Converter Applications 0.330.05 0.05 M A8 5 High DC current gain : hFE = 100 to 300 (IC = 0.3 A) Low collector-emitter saturation : VCE (sat) = 0.2 V (max) High-speed switching : tf = 100 ns (typ.) 0.475 1 4B0.05 M B0.65Absolute Maximum Ratings (Ta =

 7.2. Size:210K  toshiba
 tpcp8505.pdf pdf_icon

TPCP8507

TPCP8505 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) TPCP8505 High-Speed Switching Applications Unit: mmDC-DC Converter Applications 0.330.05 0.05 M A8 5 High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) Low collector-emitter saturation: VCE (sat) = 0.14 V (max) High-speed switching: tf = 120 ns (typ.) 0.475 1 4B0.05 M B0.65Absolu

 7.3. Size:196K  toshiba
 tpcp8504.pdf pdf_icon

TPCP8507

TPCP8504 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8504 High Speed Switching Applications Unit: mmDC-DC Converter Applications 0.330.05 0.05 M A58 High DC current gain : hFE = 400 to 1000 (IC = 0.2 A) Low collector-emitter saturation : VCE (sat) = 0.12 V (max) High-speed switching : tf = 25 ns (typ.) 0.475 1 4B 0.05 M B0.65 2.90.1A0

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Datasheet: TPC6602 , TPC6603 , TPC6604 , TPC6701 , TPC6D03 , TPCP8501 , TPCP8504 , TPCP8505 , BC639 , TPCP8510 , TPCP8511 , TPCP8601 , TPCP8602 , TPCP8603 , TPCP8604 , TPCP8701 , TPCP8901 .

History: 2N6107G | NSVMMBT2907AWT1G

Keywords - TPCP8507 transistor datasheet

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 TPCP8507 equivalent finder
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