TPCP8507 - параметры, поиск аналогов, даташиты транзистора

TPCP8507 Datasheet (PDF)

..1. Size:171K toshiba
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TPCP8507 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8507 High-Speed Switching Applications Unit: mmDC/DC Converters 0.330.05 0.05 M A8 5 High DC current gain: hFE = 120~300 (IC = 0.1 A) Low collector-emitter saturation voltage: VCE(sat) = 0.14 V (max) High-speed switching: tf = 0.2 s (typ.) 0.475 1 4B 0.05 M B0.652.90.1Absolute Maximum

7.1. Size:227K toshiba
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TPCP8501 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8501 Switching Applications Unit: mmDC-DC Converter Applications 0.330.05 0.05 M A8 5 High DC current gain : hFE = 100 to 300 (IC = 0.3 A) Low collector-emitter saturation : VCE (sat) = 0.2 V (max) High-speed switching : tf = 100 ns (typ.) 0.475 1 4B0.05 M B0.65Absolute Maximum Ratings (Ta =

7.2. Size:210K toshiba
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TPCP8505 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) TPCP8505 High-Speed Switching Applications Unit: mmDC-DC Converter Applications 0.330.05 0.05 M A8 5 High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) Low collector-emitter saturation: VCE (sat) = 0.14 V (max) High-speed switching: tf = 120 ns (typ.) 0.475 1 4B0.05 M B0.65Absolu

7.3. Size:196K toshiba
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TPCP8504 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8504 High Speed Switching Applications Unit: mmDC-DC Converter Applications 0.330.05 0.05 M A58 High DC current gain : hFE = 400 to 1000 (IC = 0.2 A) Low collector-emitter saturation : VCE (sat) = 0.12 V (max) High-speed switching : tf = 25 ns (typ.) 0.475 1 4B 0.05 M B0.65 2.90.1A0

Другие транзисторы... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .