2SD2075A Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD2075A
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 90 MHz
Capacitancia de salida (Cc): 140 pF
Ganancia de corriente contínua (hFE): 500
Encapsulados: TO220NIS
Búsqueda de reemplazo de 2SD2075A
- Selecciónⓘ de transistores por parámetros
2SD2075A datasheet
8.3. Size:53K panasonic
2sd2071 e.pdf 
Transistor 2SD2071 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Unit mm Complementary to 2SB1377 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Output of 1W is obtained with a complementary pair with 0.65 max. 2SB1377. Allowing supply with the radial taping. +
8.4. Size:44K panasonic
2sd2074.pdf
Transistor 2SD2074 Silicon NPN epitaxial planer type Unit mm For low-frequency output amplification 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) For muting 0.7 4.0 0.8 For DC-DC converter Features 0.65 max. Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. +0.1 0.45 0.05 Allowing supply with the radial taping.
8.5. Size:49K panasonic
2sd2074 e.pdf
Transistor 2SD2074 Silicon NPN epitaxial planer type Unit mm For low-frequency output amplification 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) For muting 0.7 4.0 0.8 For DC-DC converter Features 0.65 max. Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. +0.1 0.45 0.05 Allowing supply with the radial taping.
8.6. Size:196K inchange semiconductor
2sd2079.pdf
isc Silicon NPN Darlington Power Transistor 2SD2079 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain- h = 2000(Min)@ (V = 3V, I = 3A) FE CE C Low Collector Saturation Voltage- V = 1.5V(Max)@ (I = 3A, I = 6mA) CE(sat) C B Complement to Type 2SB1381 Minimum Lot-to-Lot variations for robust device performance and reliable oper
8.7. Size:193K inchange semiconductor
2sd207.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD207 DESCRIPTION Excellent Safe Operating Area Collector-Emitter Sustaining Voltage- V = 100V(Min.) CEO(SUS) Low Collector Saturation Voltage- High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier and switching appli
Otros transistores... 2SB1667SM
, 2SB1682
, 2SD1407A
, 2SD1409A
, 2SD1410A
, 2SD1411A
, 2SD1412A
, 2SD1415A
, 2222A
, 2SD2206A
, 2SD2406
, 2SD2414SM
, 2SD2440
, 2SD2449
, 2SD2461
, 2SD2462
, 2SD2480
.
