2SD2075A Specs and Replacement
Type Designator: 2SD2075A
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 90 MHz
Collector Capacitance (Cc): 140 pF
Forward Current Transfer Ratio (hFE), MIN: 500
Noise Figure, dB: -
Package: TO220NIS
- BJT ⓘ Cross-Reference Search
2SD2075A datasheet
8.3. Size:53K panasonic
2sd2071 e.pdf 
Transistor 2SD2071 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Unit mm Complementary to 2SB1377 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Output of 1W is obtained with a complementary pair with 0.65 max. 2SB1377. Allowing supply with the radial taping. +... See More ⇒
8.4. Size:44K panasonic
2sd2074.pdf
Transistor 2SD2074 Silicon NPN epitaxial planer type Unit mm For low-frequency output amplification 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) For muting 0.7 4.0 0.8 For DC-DC converter Features 0.65 max. Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. +0.1 0.45 0.05 Allowing supply with the radial taping. ... See More ⇒
8.5. Size:49K panasonic
2sd2074 e.pdf
Transistor 2SD2074 Silicon NPN epitaxial planer type Unit mm For low-frequency output amplification 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) For muting 0.7 4.0 0.8 For DC-DC converter Features 0.65 max. Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. +0.1 0.45 0.05 Allowing supply with the radial taping. ... See More ⇒
8.6. Size:196K inchange semiconductor
2sd2079.pdf
isc Silicon NPN Darlington Power Transistor 2SD2079 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain- h = 2000(Min)@ (V = 3V, I = 3A) FE CE C Low Collector Saturation Voltage- V = 1.5V(Max)@ (I = 3A, I = 6mA) CE(sat) C B Complement to Type 2SB1381 Minimum Lot-to-Lot variations for robust device performance and reliable oper... See More ⇒
8.7. Size:193K inchange semiconductor
2sd207.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD207 DESCRIPTION Excellent Safe Operating Area Collector-Emitter Sustaining Voltage- V = 100V(Min.) CEO(SUS) Low Collector Saturation Voltage- High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier and switching appli... See More ⇒
Detailed specifications: 2SB1667SM
, 2SB1682
, 2SD1407A
, 2SD1409A
, 2SD1410A
, 2SD1411A
, 2SD1412A
, 2SD1415A
, 2222A
, 2SD2206A
, 2SD2406
, 2SD2414SM
, 2SD2440
, 2SD2449
, 2SD2461
, 2SD2462
, 2SD2480
.
History: 2N6133
| 2N6130
| 2N614
| CI3706
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