TTB002 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TTB002
Código: B002
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 9 MHz
Capacitancia de salida (Cc): 90 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: PW-MOLD
Búsqueda de reemplazo de transistor bipolar TTB002
TTB002 Datasheet (PDF)
ttb002.pdf
TTB002 TOSHIBA Transistor Silicon PNP Diffused Type (PCT process) TTB002 Audio Frequency Power Amplifier Application Unit: mm Low collector saturation voltage : VCE (sat) = -0.5 V (max) High power dissipation : PC = 30 W (Tc = 25C) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -60 VCollector-emitter voltage
ttb002 .pdf
TTB002 TOSHIBA Transistor Silicon PNP Diffused Type (PCT process) TTB002 Audio Frequency Power Amplifier Application Unit: mm Low collector saturation voltage : VCE (sat) = -0.5 V (max) High power dissipation : PC = 30 W (Tc = 25C) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -60 VCollector-emitter voltage
ttb001.pdf
TTB001 TOSHIBA Transistor Silicon PNP Diffused Type TTB001 Audio Frequency Power Amplifier Application Unit: mm Low collector saturation voltage : VCE (sat) = -1.7 V (max) High power dissipation : PC = 36 W (Tc = 25C) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -60 VCollector-emitter voltage VCEO -60 VEm
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
