TTB002 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TTB002
Código: B002
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 9 MHz
Capacitancia de salida (Cc): 90 pF
Ganancia de corriente contínua (hFE): 100
Encapsulados: PW-MOLD
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TTB002 datasheet
ttb002.pdf
TTB002 TOSHIBA Transistor Silicon PNP Diffused Type (PCT process) TTB002 Audio Frequency Power Amplifier Application Unit mm Low collector saturation voltage VCE (sat) = -0.5 V (max) High power dissipation PC = 30 W (Tc = 25 C) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage
ttb002 .pdf
TTB002 TOSHIBA Transistor Silicon PNP Diffused Type (PCT process) TTB002 Audio Frequency Power Amplifier Application Unit mm Low collector saturation voltage VCE (sat) = -0.5 V (max) High power dissipation PC = 30 W (Tc = 25 C) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage
ttb001.pdf
TTB001 TOSHIBA Transistor Silicon PNP Diffused Type TTB001 Audio Frequency Power Amplifier Application Unit mm Low collector saturation voltage VCE (sat) = -1.7 V (max) High power dissipation PC = 36 W (Tc = 25 C) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -60 V Em
Otros transistores... 2SD2584 , 2SD2604 , 2SD2636 , 2SD2686 , 2SD2695 , 2SD2719 , TPCP8L01 , TTB001 , D882P , 2SA673AKC , 2SA673AKD , 2SC1213AKC , 2SC1213AKD , 2SC2618C , 2SD2655 , 2SC4702 , 2SB1691 .
History: 2SC1472 | SK3114A | HMJE2955T
History: 2SC1472 | SK3114A | HMJE2955T
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