TTB002 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

TTB002 Specs and Replacement

Type Designator: TTB002

SMD Transistor Code: B002

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 9 MHz

Collector Capacitance (Cc): 90 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: PW-MOLD

TTB002 Substitution

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TTB002 datasheet

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TTB002 TOSHIBA Transistor Silicon PNP Diffused Type (PCT process) TTB002 Audio Frequency Power Amplifier Application Unit mm Low collector saturation voltage VCE (sat) = -0.5 V (max) High power dissipation PC = 30 W (Tc = 25 C) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage ... See More ⇒

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ttb001.pdf pdf_icon

TTB001 TOSHIBA Transistor Silicon PNP Diffused Type TTB001 Audio Frequency Power Amplifier Application Unit mm Low collector saturation voltage VCE (sat) = -1.7 V (max) High power dissipation PC = 36 W (Tc = 25 C) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -60 V Em... See More ⇒

Detailed specifications: 2SD2584, 2SD2604, 2SD2636, 2SD2686, 2SD2695, 2SD2719, TPCP8L01, TTB001, D882P, 2SA673AKC, 2SA673AKD, 2SC1213AKC, 2SC1213AKD, 2SC2618C, 2SD2655, 2SC4702, 2SB1691