2SC6011 Todos los transistores

 

2SC6011 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC6011

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 160 W

Tensión colector-base (Vcb): 200 V

Tensión colector-emisor (Vce): 200 V

Corriente del colector DC máxima (Ic): 15 A

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 20 MHz

Ganancia de corriente contínua (hfe): 50

Empaquetado / Estuche: TO3P

Búsqueda de reemplazo de transistor bipolar 2SC6011

 

2SC6011 Datasheet (PDF)

1.1. 2sc6011a.pdf Size:208K _sanken-ele

2SC6011
2SC6011

2-1 Transistors Absolute Maximum Ratings ICBO hFE VCBO VCEO Ic Pc Conditions Conditions Part Number Applications VCB VCE Ic µ (V) (V) (A) (W) ( A) (V) min max (V) (A) 2SC2837 Audio, general-purpose 150 150 10 100 100 150 50 180 4 3 2SC2921 Audio, general-purpose 160 160 15 150 100 160 50 180 4 5 2SC2922 Audio, general-purpose 180 180 17 200 100 180 30 180 4 8 2SC3263 Audio, gener

1.2. 2sc6011a.pdf Size:215K _inchange_semiconductor

2SC6011
2SC6011

isc Silicon NPN Power Transistor 2SC6011A DESCRIPTION ·High Power Handling capacity ·High Collector-Emitter Breakdown Voltage- : V = 230V(Min) (BR)CEO ·Complement to Type 2SA2151A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage

 1.3. 2sc6011.pdf Size:181K _inchange_semiconductor

2SC6011
2SC6011

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6011 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V = 200V(Min) (BR)CEO ·Good Linearity of h FE ·Complement to Type 2SA2151 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE

1.4. 2sc6011 2sc6011a.pdf Size:184K _inchange_semiconductor

2SC6011
2SC6011

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6011/A DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V = 200V(Min)-2SC6011 (BR)CEO = 200V(Min)-2SC6011A ·Good Linearity of h FE ·Complement to Type 2SA2151/A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general pu

 1.5. 2sc6011 a.pdf Size:233K _inchange_semiconductor

2SC6011
2SC6011

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC6011/A DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min)-2SC6011 = 200V(Min)-2SC6011A ·Good Linearity of hFE ·Complement to Type 2SA2151/A APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE

Otros transistores... T2393 , T2415 , T2417 , T2418 , T2448 , T2452 , T2453 , T2454 , 8050 , T2469 , T2470 , T2471 , T2472 , T2478 , T2479 , T2490 , T2491 .

 

 
Back to Top

 


2SC6011
  2SC6011
  2SC6011
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: YZ21 | WT062 | TL142 | TIP3055T | TIP2955T | MN638S | MJE340T | MJE3055AT | MJ10012T | KTD1945 | KTC2202 | KTC2200 | KSD880W | BUX47AFI | BUX18A | BUW12W | BUW12AW | BUW11W | BUW11AW | BUV48BFI |

 

 

 
Back to Top