All Transistors. 2SC6011 Datasheet

 

2SC6011 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC6011

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 160 W

Maximum Collector-Base Voltage |Vcb|: 200 V

Maximum Collector-Emitter Voltage |Vce|: 200 V

Maximum Collector Current |Ic max|: 15 A

Transition Frequency (ft): 20 MHz

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO3P

2SC6011 Transistor Equivalent Substitute - Cross-Reference Search

 

2SC6011 Datasheet (PDF)

1.1. 2sc6011a.pdf Size:208K _sanken-ele

2SC6011
2SC6011

2-1 Transistors Absolute Maximum Ratings ICBO hFE VCBO VCEO Ic Pc Conditions Conditions Part Number Applications VCB VCE Ic µ (V) (V) (A) (W) ( A) (V) min max (V) (A) 2SC2837 Audio, general-purpose 150 150 10 100 100 150 50 180 4 3 2SC2921 Audio, general-purpose 160 160 15 150 100 160 50 180 4 5 2SC2922 Audio, general-purpose 180 180 17 200 100 180 30 180 4 8 2SC3263 Audio, gener

1.2. 2sc6011a.pdf Size:215K _inchange_semiconductor

2SC6011
2SC6011

isc Silicon NPN Power Transistor 2SC6011A DESCRIPTION ·High Power Handling capacity ·High Collector-Emitter Breakdown Voltage- : V = 230V(Min) (BR)CEO ·Complement to Type 2SA2151A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage

 1.3. 2sc6011.pdf Size:181K _inchange_semiconductor

2SC6011
2SC6011

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6011 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V = 200V(Min) (BR)CEO ·Good Linearity of h FE ·Complement to Type 2SA2151 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE

1.4. 2sc6011 2sc6011a.pdf Size:184K _inchange_semiconductor

2SC6011
2SC6011

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6011/A DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V = 200V(Min)-2SC6011 (BR)CEO = 200V(Min)-2SC6011A ·Good Linearity of h FE ·Complement to Type 2SA2151/A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general pu

 1.5. 2sc6011 a.pdf Size:233K _inchange_semiconductor

2SC6011
2SC6011

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC6011/A DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min)-2SC6011 = 200V(Min)-2SC6011A ·Good Linearity of hFE ·Complement to Type 2SA2151/A APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE

Datasheet: T2393 , T2415 , T2417 , T2418 , T2448 , T2452 , T2453 , T2454 , 8050 , T2469 , T2470 , T2471 , T2472 , T2478 , T2479 , T2490 , T2491 .

 

 
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