Справочник транзисторов. 2SC6011

 

Биполярный транзистор 2SC6011 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SC6011

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 160 W

Макcимально допустимое напряжение коллектор-база (Ucb): 200 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 200 V

Макcимальный постоянный ток коллектора (Ic): 15 A

Граничная частота коэффициента передачи тока (ft): 20 MHz

Статический коэффициент передачи тока (hfe): 50

Корпус транзистора: TO3P

Аналоги (замена) для 2SC6011

 

 

2SC6011 Datasheet (PDF)

1.1. 2sc6011a.pdf Size:208K _sanken-ele

2SC6011
2SC6011

2-1 Transistors Absolute Maximum Ratings ICBO hFE VCBO VCEO Ic Pc Conditions Conditions Part Number Applications VCB VCE Ic µ (V) (V) (A) (W) ( A) (V) min max (V) (A) 2SC2837 Audio, general-purpose 150 150 10 100 100 150 50 180 4 3 2SC2921 Audio, general-purpose 160 160 15 150 100 160 50 180 4 5 2SC2922 Audio, general-purpose 180 180 17 200 100 180 30 180 4 8 2SC3263 Audio, gener

1.2. 2sc6011a.pdf Size:215K _inchange_semiconductor

2SC6011
2SC6011

isc Silicon NPN Power Transistor 2SC6011A DESCRIPTION ·High Power Handling capacity ·High Collector-Emitter Breakdown Voltage- : V = 230V(Min) (BR)CEO ·Complement to Type 2SA2151A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage

 1.3. 2sc6011.pdf Size:181K _inchange_semiconductor

2SC6011
2SC6011

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6011 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V = 200V(Min) (BR)CEO ·Good Linearity of h FE ·Complement to Type 2SA2151 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE

1.4. 2sc6011 2sc6011a.pdf Size:184K _inchange_semiconductor

2SC6011
2SC6011

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6011/A DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V = 200V(Min)-2SC6011 (BR)CEO = 200V(Min)-2SC6011A ·Good Linearity of h FE ·Complement to Type 2SA2151/A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general pu

 1.5. 2sc6011 a.pdf Size:233K _inchange_semiconductor

2SC6011
2SC6011

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC6011/A DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min)-2SC6011 = 200V(Min)-2SC6011A ·Good Linearity of hFE ·Complement to Type 2SA2151/A APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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