2SAR514R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SAR514R
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.7 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 380 MHz
Capacitancia de salida (Cc): 10 pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: TSMT3
Búsqueda de reemplazo de transistor bipolar 2SAR514R
2SAR514R Datasheet (PDF)
2sar514r.pdf
2SAR514RDatasheetPNP -0.7A -80V Middle Power TransistorlOutlinel SOT-346T Parameter Value SC-96 VCEO-80VIC-0.7ATSMT3lFeatures lInner circuitl l1)Suitable for Middle Power Driver2)Complementary NPN Types:2SCR514R3)Low saturation voltageVCE(sat)=-400mV(Max.)(IC/IB=-300mA/-15mA)lApplicationlLOW FREQUENCY AMP
2sar514p.pdf
Midium Power Transistors (-80V / -0.7A) 2SAR514P Structure Dimensions (Unit : mm)PNP Silicon epitaxial planar transistor Features1) Low saturation voltage, typicallyVCE (sat) = -0.4V (Max.) (IC / IB= -300mA / -15mA)(1) (2) (3)2) High speed switching ApplicationsAbbreviated symbol : MDDriver Packaging specifications Inner circuit (Unit : mm)Package
2sar514pfra.pdf
2SAR514PFRA2SAR514PDatasheetPNP -0.7A -80V Middle Power TransistorAEC-Q101 QualifiedlOutline MPT3Parameter ValueVCEO-80VBase Collector IC-0.7AEmitter 2SAR514P 2SAR514PFRAlFeatures(SC-62) 1) Suitable for Middle Power Driver2SCR514PFRA2) Complementary NPN Types : 2SCR514P3) Low VCE(sat)VCE(sat)= -0.4V(Max.)(IC/IB= -300mA/ -15mA)4) Lead
2sar513p5.pdf
2SAR513P5DatasheetMiddle Power Transistors(-50V / -1A)lOutlinel SOT-89 Parameter Value SC-62 VCEO-50VIC-1AMPT3lFeatures lInner circuitl l1)Low saturation voltage,typicallyVCE(sat)=-400mV(Max.)(IC/IB=-500mA/-25mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPackaging spe
2sar513p.pdf
Midium Power Transistors (-50V / -1A) 2SAR513P Structure Dimensions (Unit : mm)PNP Silicon epitaxial planar transistor Features1) Low saturation voltage, typicallyVCE (sat) = -0.4V (Max.) (IC / IB= -500mA / -25mA)(1) (2) (3)2) High speed switching ApplicationsAbbreviated symbol : MCDriver Packaging specifications Inner circuit (Unit : mm)Package T
2sar513pfra.pdf
2SAR513P2SAR513PFRADatasheetPNP -1.0A -50V Middle Power TransistorAEC-Q101 QualifiedlOutline MPT3Parameter ValueVCEO-50VBase IC Collector -1.0AEmitter 2SAR513P 2SAR513PFRAlFeatures(SC-62) 1) Suitable for Middle Power Driver2SCR513PFRA2) Complementary NPN Types : 2SCR513P3) Low VCE(sat)VCE(sat)= -0.4V(Max.)(IC/IB= -500mA/ -25mA)4) Lead F
2sar512pfra.pdf
2SAR512P FRADatasheetMiddle Power Transistor(-30V/-2A)AEC-Q101 QualifiedlOutlinel SOT-89 Parameter Value SC-62 VCEO-30VIC-2AMPT3lFeatures lInner circuitl l1)Low saturation voltageVCE(sat)=-400mV(Max.)(IC/IB=-700mA/-35mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPac
2sar512p5.pdf
2SAR512P5DatasheetMedium Power Transistors(-30V/-2A)lOutlinel SOT-89 Parameter Value SC-62 VCEO-30VIC-2AMPT3lFeatures lInner circuitl l1)Low saturation voltage,typicallyVCE(sat)=-0.4V(Max.)(IC/IB=-700mA/-35mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPackaging specif
2sar512r.pdf
2SAR512RDatasheetPNP -2.0A -30V Middle Power TransistorlOutline TSMT3Parameter ValueCollector VCEO-30VBase IC-2.0AEmitter 2SAR512R (SC-96) lFeatures1) Suitable for Middle Power Driver2) Complementary NPN Types : 2SCR512R3) Low VCE(sat)VCE(sat)= -0.4V(Max.)(IC/IB= -700mA/ -35mA)4) Lead Free/RoHS Compliant.lInner circuitCollector lApplicationsMoto
2sar512p.pdf
Medium Power Transistors (-30V / -2A) 2SAR512P Structure Dimensions (Unit : mm)PNP Silicon epitaxial planar transistorMPT3 Features1) Low saturation voltage, typicallyVCE (sat) = -0.4V (Max.) (IC / IB= -700mA / -35mA)(1) (2) (3)2) High speed switching(1)Base Applications(2)CollectorAbbreviated symbol : MB(3)EmitterDriver Packaging specifications Inner circuit
2sar513r.pdf
2SAR513RDatasheetPNP -1.0A -50V Middle Power TransistorlOutlinel SOT-346T Parameter Value SC-96 VCEO-50VIC-1ATSMT3lFeatures lInner circuitl l1)Suitable for Middle Power Driver2)Complementary NPN Types:2SCR513R3)Low VCE(sat)VCE(sat)=-400mV(Max.)(IC/IB=-500A/-25mA)lApplicationlLOW FREQUENCY AMPLIFIER, HIGH
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: BSV27L
History: BSV27L
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