All Transistors. 2SAR514R Datasheet

 

2SAR514R Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SAR514R
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.7 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 380 MHz
   Collector Capacitance (Cc): 10 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TSMT3

 2SAR514R Transistor Equivalent Substitute - Cross-Reference Search

   

2SAR514R Datasheet (PDF)

 ..1. Size:1073K  rohm
2sar514r.pdf

2SAR514R
2SAR514R

2SAR514RDatasheetPNP -0.7A -80V Middle Power TransistorlOutlinel SOT-346T Parameter Value SC-96 VCEO-80VIC-0.7ATSMT3lFeatures lInner circuitl l1)Suitable for Middle Power Driver2)Complementary NPN Types:2SCR514R3)Low saturation voltageVCE(sat)=-400mV(Max.)(IC/IB=-300mA/-15mA)lApplicationlLOW FREQUENCY AMP

 7.1. Size:236K  rohm
2sar514p.pdf

2SAR514R
2SAR514R

Midium Power Transistors (-80V / -0.7A) 2SAR514P Structure Dimensions (Unit : mm)PNP Silicon epitaxial planar transistor Features1) Low saturation voltage, typicallyVCE (sat) = -0.4V (Max.) (IC / IB= -300mA / -15mA)(1) (2) (3)2) High speed switching ApplicationsAbbreviated symbol : MDDriver Packaging specifications Inner circuit (Unit : mm)Package

 7.2. Size:1324K  rohm
2sar514pfra.pdf

2SAR514R
2SAR514R

2SAR514PFRA2SAR514PDatasheetPNP -0.7A -80V Middle Power TransistorAEC-Q101 QualifiedlOutline MPT3Parameter ValueVCEO-80VBase Collector IC-0.7AEmitter 2SAR514P 2SAR514PFRAlFeatures(SC-62) 1) Suitable for Middle Power Driver2SCR514PFRA2) Complementary NPN Types : 2SCR514P3) Low VCE(sat)VCE(sat)= -0.4V(Max.)(IC/IB= -300mA/ -15mA)4) Lead

 8.1. Size:1841K  rohm
2sar513p5.pdf

2SAR514R
2SAR514R

2SAR513P5DatasheetMiddle Power Transistors(-50V / -1A)lOutlinel SOT-89 Parameter Value SC-62 VCEO-50VIC-1AMPT3lFeatures lInner circuitl l1)Low saturation voltage,typicallyVCE(sat)=-400mV(Max.)(IC/IB=-500mA/-25mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPackaging spe

 8.2. Size:234K  rohm
2sar513p.pdf

2SAR514R
2SAR514R

Midium Power Transistors (-50V / -1A) 2SAR513P Structure Dimensions (Unit : mm)PNP Silicon epitaxial planar transistor Features1) Low saturation voltage, typicallyVCE (sat) = -0.4V (Max.) (IC / IB= -500mA / -25mA)(1) (2) (3)2) High speed switching ApplicationsAbbreviated symbol : MCDriver Packaging specifications Inner circuit (Unit : mm)Package T

 8.3. Size:1321K  rohm
2sar513pfra.pdf

2SAR514R
2SAR514R

2SAR513P2SAR513PFRADatasheetPNP -1.0A -50V Middle Power TransistorAEC-Q101 QualifiedlOutline MPT3Parameter ValueVCEO-50VBase IC Collector -1.0AEmitter 2SAR513P 2SAR513PFRAlFeatures(SC-62) 1) Suitable for Middle Power Driver2SCR513PFRA2) Complementary NPN Types : 2SCR513P3) Low VCE(sat)VCE(sat)= -0.4V(Max.)(IC/IB= -500mA/ -25mA)4) Lead F

 8.4. Size:1570K  rohm
2sar512pfra.pdf

2SAR514R
2SAR514R

2SAR512P FRADatasheetMiddle Power Transistor(-30V/-2A)AEC-Q101 QualifiedlOutlinel SOT-89 Parameter Value SC-62 VCEO-30VIC-2AMPT3lFeatures lInner circuitl l1)Low saturation voltageVCE(sat)=-400mV(Max.)(IC/IB=-700mA/-35mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPac

 8.5. Size:1803K  rohm
2sar512p5.pdf

2SAR514R
2SAR514R

2SAR512P5DatasheetMedium Power Transistors(-30V/-2A)lOutlinel SOT-89 Parameter Value SC-62 VCEO-30VIC-2AMPT3lFeatures lInner circuitl l1)Low saturation voltage,typicallyVCE(sat)=-0.4V(Max.)(IC/IB=-700mA/-35mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPackaging specif

 8.6. Size:377K  rohm
2sar512r.pdf

2SAR514R
2SAR514R

2SAR512RDatasheetPNP -2.0A -30V Middle Power TransistorlOutline TSMT3Parameter ValueCollector VCEO-30VBase IC-2.0AEmitter 2SAR512R (SC-96) lFeatures1) Suitable for Middle Power Driver2) Complementary NPN Types : 2SCR512R3) Low VCE(sat)VCE(sat)= -0.4V(Max.)(IC/IB= -700mA/ -35mA)4) Lead Free/RoHS Compliant.lInner circuitCollector lApplicationsMoto

 8.7. Size:220K  rohm
2sar512p.pdf

2SAR514R
2SAR514R

Medium Power Transistors (-30V / -2A) 2SAR512P Structure Dimensions (Unit : mm)PNP Silicon epitaxial planar transistorMPT3 Features1) Low saturation voltage, typicallyVCE (sat) = -0.4V (Max.) (IC / IB= -700mA / -35mA)(1) (2) (3)2) High speed switching(1)Base Applications(2)CollectorAbbreviated symbol : MB(3)EmitterDriver Packaging specifications Inner circuit

 8.8. Size:1579K  rohm
2sar513r.pdf

2SAR514R
2SAR514R

2SAR513RDatasheetPNP -1.0A -50V Middle Power TransistorlOutlinel SOT-346T Parameter Value SC-96 VCEO-50VIC-1ATSMT3lFeatures lInner circuitl l1)Suitable for Middle Power Driver2)Complementary NPN Types:2SCR513R3)Low VCE(sat)VCE(sat)=-400mV(Max.)(IC/IB=-500A/-25mA)lApplicationlLOW FREQUENCY AMPLIFIER, HIGH

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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