2N5831 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5831
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.625 W
Tensión colector-base (Vcb): 160 V
Tensión colector-emisor (Vce): 140 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 4 pF
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar 2N5831
2N5831 Datasheet (PDF)
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2n5830.pdf
Discrete POWER & SignalTechnologies2N5830C TO-92BENPN General Purpose AmplifierThis device is designed for general purpose highvoltage amplifiers and gas discharge display driving. Sourcedfrom Process 16. See 2N5551 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 100 VV Collector-
2n5832.pdf
MCCMicro Commercial Components21201 Itasca Street Chatsworth 2N5832CA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Through Hole PackagePlastic-case BipolarNPN TransistorPin Configuration Bottom View C B EElectrical Characteristics @ 25C Unless Otherwise SpecifiedTO-92Symbol Parameter Min Max UnitsA EOFF CHARACTERISTICS V(BR)CEO Collector-Emitt
2n5838.pdf
2N5838Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 275V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 3A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a
2n5832.pdf
2N5832 0.6 A, 160 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES General Purpose Switching Transistor TO-92 G HJMillimeterREF. A D Min. Max.A 4.40 4.70B 4.30 4.70BC 12.70 -CollectorD 3.30 3.81KE 0.36 0.56F 0.36 0.51G 1.27 TYP.H 1.10 -
2n5838 2n5839 2n5840.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5838 2N5839 2N5840 DESCRIPTION With TO-3 package Low collector-emitter saturation voltage APPLICATIONS For use in switching power supply applications and other inductive switching circuits. PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute max
2n5838 2n5839 2n5840.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5838 2N5839 2N5840 DESCRIPTION With TO-3 package Low collector saturation voltage High breakdown voltage APPLICATIONS For use in switching power supply and other inductive switching circuits. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 Collecto
Otros transistores... 2N5826 , 2N5827 , 2N5827A , 2N5828 , 2N5828A , 2N5829 , 2N583 , 2N5830 , D882 , 2N5832 , 2N5833 , 2N5834 , 2N5835 , 2N5836 , 2N5837 , 2N5838 , 2N5839 .
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