2SAR552P Todos los transistores

Midium Power Transistors (-30V / -3A) 2SAR552P Structure Dimensions (Unit mm) PNP Silicon epitaxial planar transistor Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -1A / -50mA) (1) (2) (3) 2) High speed switching Applications Abbreviated symbol MF Driver Packaging specifications Inner circuit (Unit mm) Package Tapi

2SAR552P5 Datasheet Middle Power Transistors (-30V / -3A) lOutline l SOT-89 Parameter Value SC-62 VCEO -30V IC -3A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage, typically VCE(sat) =-400mV (Max.) (IC/IB=-1A/-50mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPackaging sp

2SAR552P 2SAR552PFRA Datasheet PNP -3.0A -30V Middle Power Transistor AEC-Q101 Qualified lOutline MPT3 Parameter Value VCEO -30V Base IC -3.0A Collector Emitter 2SAR552PFRA 2SAR552P lFeatures (SC-62) 1) Suitable for Middle Power Driver 2) Complementary NPN Types 2SCR552P 2SCR552PFRA 3) Low VCE(sat) VCE(sat)= -0.4V(Max.) (IC/IB= -1A/ -50mA) 4) Lead Fr

2SAR553P FRA Datasheet Middle Power Transistor (-50V / -2A) AEC-Q101 Qualified lOutline l SOT-89 Parameter Value SC-62 VCEO -50V IC -2A MPT3 lFeatures lInner circuit l l 1) Low saturation voltage VCE(sat) = -400mV (Max.) (IC/ IB=-700mA/-35mA) 2) High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITC

2SAR554R Datasheet PNP -1.5A -80V Middle Power Transistor lOutline l SOT-346T Parameter Value SC-96 VCEO -80V IC -1.5A TSMT3 lFeatures lInner circuit l l 1)Suitable for Middle Power Driver 2)Complementary NPN Types 2SCR554R 3)Low VCE(sat) VCE(sat)=-400mV (Max.) (IC/IB=-500mA/-25mA) lApplication l LOW FREQUENCY AMPLIFIER, H

2SAR553R Datasheet PNP -2.0A -50V Middle Power Transistor lOutline TSMT3 Parameter Value Collector VCEO -50V Base IC -2.0A Emitter 2SAR553R lFeatures (SC-96) 1) Suitable for Middle Power Driver 2) Complementary NPN Types 2SCR553R 3) Low VCE(sat) VCE(sat)= -0.4V(Max.) (IC/IB= -700mA/ -35mA) 4) Lead Free/RoHS Compliant. lInner circuit Collector lApplications Moto

2SAR554P Data Sheet PNP -1.5A -80V Middle Power Transistor lOutline MPT3 Parameter Value VCEO -80V Base IC -1.5A Collector Emitter 2SAR554P lFeatures (SC-62) 1) Suitable for Middle Power Driver 2) Complementary NPN Types 2SCR554P 3) Low VCE(sat) VCE(sat)= -0.40V(Max.) (IC/IB= -500mA/ -25mA) 4) Lead Free/RoHS Compliant. lInner circuit Collector lApplica

2SAR553P HZG Middle Power Transistor (-50V / -2A) Datasheet lOutline l SOT-89 Parameter Value SC-62 VCEO -50V IC -2A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage VCE(sat) = -400mV (Max.)(IC/ IB=-700mA/-35mA) 2)High speed switching 3)AEC-Q101 Qualified lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING

2SAR554P5 Datasheet Middle Power Transistors (-80V / -1.5V) lOutline l SOT-89 Parameter Value SC-62 VCEO -80V IC -1.5A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage, typically VCE(sat)=-400mV (Max.) (IC/IB=-500mA/-25mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPackag

2SAR553P Data Sheet PNP -2.0A -50V Middle Power Transistor lOutline MPT3 Parameter Value VCEO -50V Base IC Collector -2.0A Emitter 2SAR553P lFeatures (SC-62) 1) Suitable for Middle Power Driver 2) Complementary NPN Types 2SCR553P 3) Low VCE(sat) VCE(sat)= -0.4V(Max.) (IC/IB= -700mA/ -35mA) 4) Lead Free/RoHS Compliant. lInner circuit Collector lApplica

2SAR553P5 Datasheet Midium Power Transistors (-50V / -2A) lOutline l SOT-89 Parameter Value SC-62 VCEO -50V IC -2A MPT3 lFeatures lInner circuit l l 1) Low saturation voltage, typically VCE(sat) = -0.4V (Max.) (IC/ IB= -700mA / -35mA) 2) High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPackaging

2SAR554P 2SAR554PFRA Datasheet PNP -1.5A -80V Middle Power Transistor AEC-Q101 Qualified lOutline MPT3 Parameter Value VCEO -80V Base IC -1.5A Collector Emitter 2SAR554PFRA 2SAR554P lFeatures (SC-62) 1) Suitable for Middle Power Driver 2) Complementary NPN Types 2SCR554P 2SCR554PFRA 3) Low VCE(sat) VCE(sat)= -0.40V(Max.) (IC/IB= -500mA/ -25mA) 4) Lead