Midium Power Transistors (-30V / -3A) 2SAR552P Structure Dimensions (Unit : mm)PNP Silicon epitaxial planar transistor Features1) Low saturation voltage, typicallyVCE (sat) = -0.4V (Max.) (IC / IB= -1A / -50mA)(1) (2) (3)2) High speed switching ApplicationsAbbreviated symbol : MFDriver Packaging specifications Inner circuit (Unit : mm)Package Tapi

2SAR552P5DatasheetMiddle Power Transistors (-30V / -3A)lOutlinel SOT-89 Parameter Value SC-62 VCEO-30VIC-3AMPT3lFeatures lInner circuitl l1)Low saturation voltage, typicallyVCE(sat) =-400mV (Max.)(IC/IB=-1A/-50mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPackaging sp

2SAR552P2SAR552PFRADatasheetPNP -3.0A -30V Middle Power TransistorAEC-Q101 QualifiedlOutline MPT3Parameter ValueVCEO-30VBase IC-3.0A Collector Emitter 2SAR552PFRA2SAR552P lFeatures(SC-62) 1) Suitable for Middle Power Driver2) Complementary NPN Types : 2SCR552P2SCR552PFRA3) Low VCE(sat)VCE(sat)=-0.4V(Max.)(IC/IB= -1A/ -50mA)4) Lead Fr

2SAR553P FRADatasheetMiddle Power Transistor (-50V / -2A)AEC-Q101 QualifiedlOutlinel SOT-89 Parameter Value SC-62 VCEO-50VIC-2AMPT3lFeatures lInner circuitl l1) Low saturation voltageVCE(sat) = -400mV (Max.) (IC/ IB=-700mA/-35mA)2) High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITC

2SAR554RDatasheetPNP -1.5A -80V Middle Power TransistorlOutlinel SOT-346T Parameter Value SC-96 VCEO-80VIC-1.5ATSMT3lFeatures lInner circuitl l1)Suitable for Middle Power Driver2)Complementary NPN Types:2SCR554R3)Low VCE(sat)VCE(sat)=-400mV (Max.)(IC/IB=-500mA/-25mA)lApplicationlLOW FREQUENCY AMPLIFIER, H

2SAR553RDatasheetPNP -2.0A -50V Middle Power TransistorlOutline TSMT3Parameter ValueCollector VCEO-50VBase IC-2.0AEmitter 2SAR553R lFeatures(SC-96) 1) Suitable for Middle Power Driver2) Complementary NPN Types : 2SCR553R3) Low VCE(sat)VCE(sat)= -0.4V(Max.)(IC/IB= -700mA/ -35mA)4) Lead Free/RoHS Compliant.lInner circuitCollector lApplicationsMoto

2SAR554PData SheetPNP -1.5A -80V Middle Power TransistorlOutline MPT3Parameter ValueVCEO-80VBase IC-1.5A Collector Emitter 2SAR554P lFeatures(SC-62) 1) Suitable for Middle Power Driver2) Complementary NPN Types : 2SCR554P3) Low VCE(sat)VCE(sat)= -0.40V(Max.)(IC/IB= -500mA/ -25mA)4) Lead Free/RoHS Compliant.lInner circuitCollector lApplica

2SAR553P HZGMiddle Power Transistor (-50V / -2A)DatasheetlOutlinel SOT-89 Parameter Value SC-62 VCEO-50VIC-2AMPT3lFeatures lInner circuitl l1)Low saturation voltageVCE(sat) = -400mV (Max.)(IC/ IB=-700mA/-35mA)2)High speed switching3)AEC-Q101 QualifiedlApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING

2SAR554P5DatasheetMiddle Power Transistors (-80V / -1.5V)lOutlinel SOT-89 Parameter Value SC-62 VCEO-80VIC-1.5AMPT3lFeatures lInner circuitl l1)Low saturation voltage, typicallyVCE(sat)=-400mV (Max.)(IC/IB=-500mA/-25mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPackag

2SAR553PData SheetPNP -2.0A -50V Middle Power TransistorlOutline MPT3Parameter ValueVCEO-50VBase ICCollector -2.0AEmitter 2SAR553P lFeatures(SC-62) 1) Suitable for Middle Power Driver2) Complementary NPN Types : 2SCR553P3) Low VCE(sat)VCE(sat)= -0.4V(Max.)(IC/IB= -700mA/ -35mA)4) Lead Free/RoHS Compliant.lInner circuitCollector lApplica

2SAR553P5DatasheetMidium Power Transistors (-50V / -2A)lOutlinel SOT-89 Parameter Value SC-62 VCEO-50VIC-2AMPT3lFeatures lInner circuitl l1) Low saturation voltage, typicallyVCE(sat) = -0.4V (Max.) (IC/ IB= -700mA / -35mA)2) High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPackaging

2SAR554P2SAR554PFRADatasheetPNP -1.5A -80V Middle Power TransistorAEC-Q101 QualifiedlOutline MPT3Parameter ValueVCEO-80VBase IC-1.5A Collector Emitter 2SAR554PFRA2SAR554P lFeatures(SC-62) 1) Suitable for Middle Power Driver2) Complementary NPN Types : 2SCR554P2SCR554PFRA3) Low VCE(sat)VCE(sat)= -0.40V(Max.)(IC/IB= -500mA/ -25mA)4) Lead