2SB1694 Datasheet. Equivalente

 ..1. Size:921K  rohm
 2sb1694.pdf

2SB1694 Datasheet General purpose amplification (-30V, -1A) lOutline l SOT-323 Parameter Value SC-70 VCEO -30V IC -1A UMT3 lFeatures lInner circuit l l 1)A collector current is large 2)Collector-Emitter saturation voltage is low. VCE(sat) -380mV at IC=-500mA/IB=-25mA 3)Complements the 2SD2656. lApplication l LOW FREQUENC

 0.1. Size:1298K  rohm
 2sb1694fra.pdf

2SB1694 2SB1694FRA Datasheet PNP -1A -30V Low Frequency Amplifier Transistors AEC-Q101 Qualified lOutline UMT3 Parameter Value Collector VCEO -30V Base IC -1A Emitter 2SB1694FRA 2SB1694 SOT-323 (SC-70) lFeatures 1) A Collecotr current is large.General Purpose. 2) Collector saturation voltage is low. VCE(sat) is Max. -380mV At IC= -500mA, IB= -25mA 3) Complementary NPN Ty

 8.1. Size:77K  renesas
 2sb1691.pdf

2SB1691 Silicon PNP Epitaxial Planer Low Frequency Power Amplifier REJ03G0482-0200 (Previous ADE-208-1387A (Z)) Rev.2.00 Dec.09.2004 Features Small size package MPAK (SC 59A) Large Maximum current IC = 1 A Low collector to emitter saturation voltage VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/ 0.05 A) High power dissipation PC = 800 mW (when usi

 8.2. Size:88K  renesas
 r07ds0272ej 2sb1691-1.pdf

Preliminary Datasheet 2SB1691 R07DS0272EJ0300 (Previous REJ03G0482-0200) Silicon PNP Epitaxial Planer Rev.3.00 Low Frequency Power Amplifier Mar 28, 2011 Features Small size package MPAK (SC 59A) Large Maximum current IC = 1 A Low collector to emitter saturation voltage VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/ 0.05 A) High power dissipation

 8.3. Size:68K  rohm
 2sb1690.pdf

2SB1690 Transistors General purpose amplification(-12V, -2A) 2SB1690 Applications External dimensions (Unit mm) Low frequency amplifier TSMT3 Deiver 1.0MAX 2.9 0.85 0.4 0.7 Features (3) 1) A collector current is large. 2) Collector saturation voltage is low. (1) (2) VCE(sat) max. -180mV 0.95 0.95 0.16 1.9 at IC= -1A / IB= -50mA (1) Base (2) Emitter Ea

 8.4. Size:1510K  rohm
 2sb1695k.pdf

2SB1695K Datasheet Datasheet General purpose amplification(-30V,-1.5A) lOutline l SOT-346 Parameter Value SC-59 VCEO -30V IC -1.5A SMT3 lFeatures lInner circuit l l 1) Collector current is large. 2) VCE(sat) -370mV at IC= -1A / IB= -50mA 3) Complementary NPN Types 2SD2657K lApplication l LOW FREQUENCY AMPLIFIER, DRIVER

 8.5. Size:105K  rohm
 2sb1695.pdf

2SB1695 Transistors Low frequency amplifier 2SB1695 External dimensions (Unit mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.4 0.7 (3) Features 1) A collector current is large. 2) VCE(sat) -370mV ( ) ( ) 1 2 0.95 0.95 at IC =-1A / IB =-50mA 0.16 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector Packaging spec

 8.6. Size:942K  rohm
 2sb1695kfra.pdf

2SB1695KFRA AEC-Q101 Qualified 2SB1695KFRA

 8.7. Size:102K  rohm
 2sb1697.pdf

2SB1697 Transistors Low Frequency Amplifier (-12V, -2A) 2SB1697 External dimensions (Unit mm) Features Low VCE(sat) 4.0 VCE(sat) -180mV 1.0 2.5 0.5 (IC /IB=-1A/-50mA) (1) (2) (3) Each lead has same dimensions Abbreviated symbol FV ROHM MPT3 (1)Base JEITA SC-62 (2)Collector JEDEC SOT-89 (3)Emitter Packaging specifications Absolute maximum ratings

 8.8. Size:117K  rohm
 2sb1698.pdf

2SB1698 Transistors Low frequency amplifier 2SB1698 Dimensions (Unit mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) VCE(sat) -370mV at IC =-1A / IB =-50mA Each lead has same dimensions ROHM MPT3 (1)Base JEITA SC-62 (2)Collector JEDEC SOT-89 (3)Emitter Abbreviated symbol FL Packaging specifications

 8.9. Size:66K  rohm
 2sb1690k.pdf

2SB1690K Transistors General purpose amplification(-12V, -2A) 2SB1690K External dimensions (Units mm) Applications Low frequency amplifier Deiver Features 1.6 1) A collector current is large. 2.8 2) Collector saturation voltage is low. VCE(sat) -180mV 0.3Min. at IC= -1A / IB= -50mA Each lead has same dimensions (1) Emitter ROHM SMT3 EIAJ SC-59 (2) Ba

 8.10. Size:82K  panasonic
 2sb1693.pdf

Transistors 2SB1693 Silicon PNP epitaxial planar type For general amplification Unit mm 0.40+0.10 0.05 0.16+0.10 0.06 Features 3 Large collector current IC Mini type package, allowing downsizing of the equipment and auto- matic insertion through the tape packing and the magazine packing 1 2 (0.95) (0.95) 1.9 0.1 2.90+0.20 0.05 Absolute Maximum Ratin

 8.11. Size:83K  panasonic
 2sb1699.pdf

Transistors 2SB1699 Silicon PNP epitaxial planar type Unit mm For power amplification 4.5 0.1 1.6 0.2 1.5 0.1 Features Low collector-emitter saturation voltage VCE(sat) Mini Power type package, allowing downsizing of the equipment 1 23 and automatic insertion through the tape packing and the maga- 0.4 0.08 0.5 0.08 0.4 0.04 zine packing. 1.5 0.1 3 Absolu