2SB1694 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB1694
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 320 MHz
Capacitancia de salida (Cc): 7 pF
Ganancia de corriente contínua (hfe): 270
Paquete / Cubierta: UMT3 SC-70 SOT-323
- Selección de transistores por parámetros
2SB1694 Datasheet (PDF)
2sb1694.pdf

2SB1694DatasheetGeneral purpose amplification (-30V, -1A)lOutlinel SOT-323 Parameter Value SC-70 VCEO-30VIC-1AUMT3lFeatures lInner circuitl l1)A collector current is large2)Collector-Emitter saturation voltage is low.VCE(sat)-380mVat IC=-500mA/IB=-25mA3)Complements the 2SD2656.lApplicationlLOW FREQUENC
2sb1694fra.pdf

2SB16942SB1694FRADatasheet PNP -1A -30V Low Frequency Amplifier TransistorsAEC-Q101 QualifiedlOutlineUMT3Parameter ValueCollectorVCEO-30VBaseIC-1AEmitter2SB1694FRA2SB1694SOT-323 (SC-70)lFeatures1) A Collecotr current is large.General Purpose.2) Collector saturation voltage is low.VCE(sat) is Max. -380mVAt IC= -500mA, IB= -25mA3) Complementary NPN Ty
2sb1691.pdf

2SB1691 Silicon PNP Epitaxial Planer Low Frequency Power Amplifier REJ03G0482-0200 (Previous ADE-208-1387A (Z)) Rev.2.00 Dec.09.2004 Features Small size package: MPAK (SC59A) Large Maximum current: IC = 1 A Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A) High power dissipation: PC = 800 mW (when usi
r07ds0272ej 2sb1691-1.pdf

Preliminary Datasheet 2SB1691 R07DS0272EJ0300(Previous: REJ03G0482-0200)Silicon PNP Epitaxial Planer Rev.3.00Low Frequency Power Amplifier Mar 28, 2011Features Small size package: MPAK (SC59A) Large Maximum current: IC = 1 A Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A) High power dissipation:
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: GT109V | LMBT6520LT1G | 2SC1095 | 3DG12 | 2SC1586 | 2N5011S
History: GT109V | LMBT6520LT1G | 2SC1095 | 3DG12 | 2SC1586 | 2N5011S



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