2SCR542D Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SCR542D

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Capacitancia de salida (Cc): 25 pF

Ganancia de corriente contínua (hFE): 200

Encapsulados: CPT3 SC-63 SOT-428

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2SCR542D datasheet

 ..1. Size:491K  rohm
 2scr542d.pdf pdf_icon

2SCR542D

Midium Power Transistors (30V / 5A) 2SCR542D Structure Dimensions (Unit mm) NPN Silicon epitaxial planar transistor CPT3 (SC-63) Features 1) Low saturation voltage VCE (sat) = 0.4V (Max.) (IC / IB= 2A / 100mA) 2) High speed switching 9 (1) Base Applications (2) Collector (3) Emitter Driv

 ..2. Size:264K  inchange semiconductor
 2scr542d.pdf pdf_icon

2SCR542D

isc Silicon NPN Power Transistors 2SCR542D DESCRIPTION DC Current Gain h 200-500@ I = 0.5A FE C Collector-Emitter Breakdown Voltage V = 30V(Min) (BR) CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA

 7.1. Size:1513K  rohm
 2scr542pfra.pdf pdf_icon

2SCR542D

2SCR542PFRA 2SCR542P Data Sheet NPN 5.0A 30V Middle Power Transistor AEC-Q101 Qualified lOutline MPT3 Parameter Value VCEO 30V Base IC Collector 5.0A Emitter 2SCR542PFRA 2SCR542P lFeatures (SC-62) 1) Suitable for Middle Power Driver 2SAR542PFRA 2) Complementary PNP Types 2SAR542P 3) Low VCE(sat) VCE(sat)=0.4V Max. (IC/IB=2A/100mA) 4) Lead Free/RoHS Compliant

 7.2. Size:1479K  rohm
 2scr542f3.pdf pdf_icon

2SCR542D

2SCR542F3 Datasheet NPN 3.0A 30V Middle Power Transistor lOutline l Parameter Value HUML2020L3 VCEO 30V IC 3A 2SCR542F3 lFeatures l lInner circuit l 1) Suitable for Middle Power Driver. 2) Low VCE(sat) VCE(sat)=0.20V(Max.). (IC/IB=1A/50mA) 3) High collector current. IC=3A(max),ICP=6A(m

MOSTRAR MÁS

Otros transistores... 2SCR522EB, 2SCR522M, 2SCR522UB, 2SCR523EB, 2SCR523M, 2SCR523UB, 2SCR533D, 2SCR533P, 2N3904, 2SCR542P, 2SCR543D, 2SCR543R, 2SCR544D, 2SCR544P, 2SCR544R, 2SCR552P, 2SCR553P