Midium Power Transistors (30V / 5A) 2SCR542D Structure Dimensions (Unit : mm)NPN Silicon epitaxial planar transistorCPT3 (SC-63) Features1) Low saturation voltageVCE (sat) = 0.4V (Max.) (IC / IB= 2A / 100mA)2) High speed switching 9(1) Base Applications(2) Collector (3) EmitterDriv

isc Silicon NPN Power Transistors 2SCR542DDESCRIPTIONDC Current Gain h :200-500@ I = 0.5AFE CCollector-Emitter Breakdown Voltage: V = 30V(Min)(BR) CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

2SCR542PFRA2SCR542P Data SheetNPN 5.0A 30V Middle Power TransistorAEC-Q101 QualifiedlOutline MPT3Parameter ValueVCEO30VBaseIC Collector5.0AEmitter2SCR542PFRA2SCR542PlFeatures(SC-62)1) Suitable for Middle Power Driver2SAR542PFRA2) Complementary PNP Types : 2SAR542P3) Low VCE(sat)VCE(sat)=0.4V Max. (IC/IB=2A/100mA)4) Lead Free/RoHS Compliant

2SCR542F3DatasheetNPN 3.0A 30V Middle Power TransistorlOutlinelParameter Value HUML2020L3VCEO30VIC3A2SCR542F3 lFeaturesllInner circuitl1) Suitable for Middle Power Driver.2) Low VCE(sat)VCE(sat)=0.20V(Max.).(IC/IB=1A/50mA)3) High collector current.IC=3A(max),ICP=6A(m

2SCR542PDatasheetMiddle Power Transistor (30V / 5A)lOutlinel SOT-89 Parameter Value SC-62 VCEO30VIC5AMPT3lFeatures lInner circuitl l1)Low saturation voltage,typicallyVCE(sat)=400mV(Max.)(IC/IB=2A/100mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPackaging specification