2SCR542D Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SCR542D
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: CPT3 SC-63 SOT-428
2SCR542D Transistor Equivalent Substitute - Cross-Reference Search
2SCR542D Datasheet (PDF)
2scr542d.pdf
Midium Power Transistors (30V / 5A) 2SCR542D Structure Dimensions (Unit : mm)NPN Silicon epitaxial planar transistorCPT3 (SC-63) Features1) Low saturation voltageVCE (sat) = 0.4V (Max.) (IC / IB= 2A / 100mA)2) High speed switching 9(1) Base Applications(2) Collector (3) EmitterDriv
2scr542d.pdf
isc Silicon NPN Power Transistors 2SCR542DDESCRIPTIONDC Current Gain h :200-500@ I = 0.5AFE CCollector-Emitter Breakdown Voltage: V = 30V(Min)(BR) CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
2scr542pfra.pdf
2SCR542PFRA2SCR542P Data SheetNPN 5.0A 30V Middle Power TransistorAEC-Q101 QualifiedlOutline MPT3Parameter ValueVCEO30VBaseIC Collector5.0AEmitter2SCR542PFRA2SCR542PlFeatures(SC-62)1) Suitable for Middle Power Driver2SAR542PFRA2) Complementary PNP Types : 2SAR542P3) Low VCE(sat)VCE(sat)=0.4V Max. (IC/IB=2A/100mA)4) Lead Free/RoHS Compliant
2scr542f3.pdf
2SCR542F3DatasheetNPN 3.0A 30V Middle Power TransistorlOutlinelParameter Value HUML2020L3VCEO30VIC3A2SCR542F3 lFeaturesllInner circuitl1) Suitable for Middle Power Driver.2) Low VCE(sat)VCE(sat)=0.20V(Max.).(IC/IB=1A/50mA)3) High collector current.IC=3A(max),ICP=6A(m
2scr542p.pdf
2SCR542PDatasheetMiddle Power Transistor (30V / 5A)lOutlinel SOT-89 Parameter Value SC-62 VCEO30VIC5AMPT3lFeatures lInner circuitl l1)Low saturation voltage,typicallyVCE(sat)=400mV(Max.)(IC/IB=2A/100mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPackaging specification
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
