2N5839 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N5839  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100 W

Tensión colector-base (Vcb): 300 V

Tensión colector-emisor (Vce): 275 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 5 MHz

Ganancia de corriente contínua (hFE): 10

Encapsulados: TO3

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2N5839 datasheet

 ..1. Size:379K  no
2n5839.pdf pdf_icon

2N5839

 ..2. Size:108K  jmnic
2n5838 2n5839 2n5840.pdf pdf_icon

2N5839

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5838 2N5839 2N5840 DESCRIPTION With TO-3 package Low collector-emitter saturation voltage APPLICATIONS For use in switching power supply applications and other inductive switching circuits. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute max

 ..3. Size:117K  inchange semiconductor
2n5838 2n5839 2n5840.pdf pdf_icon

2N5839

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5838 2N5839 2N5840 DESCRIPTION With TO-3 package Low collector saturation voltage High breakdown voltage APPLICATIONS For use in switching power supply and other inductive switching circuits. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collecto

Otros transistores... 2N5831, 2N5832, 2N5833, 2N5834, 2N5835, 2N5836, 2N5837, 2N5838, A1015, 2N583A, 2N584, 2N5840, 2N5841, 2N5842, 2N5843, 2N5844, 2N5845