2SD1782K . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1782K
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 120 MHz
Capacitancia de salida (Cc): 7.5 pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: SMT3 SC-59
Búsqueda de reemplazo de transistor bipolar 2SD1782K
2SD1782K Datasheet (PDF)
2sd1782k.pdf
2SD1782KDatasheetPower Transistor (80V, 500mA)lOutlinel SOT-346 Parameter Value SC-59 VCEO80VIC500mASMT3lFeatures lInner circuitl l1)Low VCE(sat) VCE(sat)=0.2V(Typ.) (IC/IB=500mA/50mA)2)High breakdown voltage. BVCEO=80V3)Complements the 2SB1198KlApplicationlDRIVERlPackaging specificationslBasic
2sd1782kfra.pdf
2SD1782KFRA2SD1782KTransistors AEC-Q101 QualifiedPower Transistor (80V, 0.5A) 2SD1782K2SD1782KFRA External dimensions (Unit : mm) Features 1) Low VCE(sat).2.90.2VCE(sat) =0.2V(Typ.) 1.1+0.21.90.2 -0.1(IC / IB=0.5 A / 50mA) 0.80.10.95 0.952) High VCEO,VCEO=80V (1) (2)0~0.12SB1198KFRA3) Complements the 2SB1198K. (3)+0.10.15-0.06+0.10.4-0.0
2sd1782.pdf
TransistorsPower Transistor (80V, 0.5A)2SD1782KFFeatures FExternal dimensions (Units: mm)1) Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 0.5A / 50mA)2) High VCEO, VCEO = 80V3) Complements the 2SB1198K.FStructureEpitaxial planar typeNPN silicon transistorFAbsolute maximum ratings (Ta = 25_C)(96-222-D93)271Transistors 2SD1782KFElectrical characteristics (Ta = 25_
2sd1782.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SD1782 Preliminary NPN EPITAXIAL SILICON TRANSISTOR POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1782 is an NPN silicon transistor. it uses UTCs advanced technology to provide customers with high collector-emitter breakdown voltage, low collector-emitter saturation voltage and high DC current gain, etc. FEATURES * High collector-emitte
2sd1782.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate TransistorsSOT-23 2SD1782 TRANSISTOR (NPN)FEATURES 1. BASE Low VCE(sat)2. EMITTER High BVCEO3. COLLECTOR Complements the 2SB1198MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 80 VVCEO Collector-Emitter Voltage 80 V VEBO Emitter-Bas
2sd1782.pdf
SMD Type TransistorsNPN Transistors2SD1782SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=0.5A Collector Emitter Voltage VCEO=80V 1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collect
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: 2SD1821 | 2SB1055 | 2N1542 | MMBT5855
History: 2SD1821 | 2SB1055 | 2N1542 | MMBT5855
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