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2SD1782K Specs and Replacement

Type Designator: 2SD1782K

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 120 MHz

Collector Capacitance (Cc): 7.5 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SMT3 SC-59

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2SD1782K datasheet

 ..1. Size:1126K  rohm

2sd1782k.pdf pdf_icon

2SD1782K

2SD1782K Datasheet Power Transistor (80V, 500mA) lOutline l SOT-346 Parameter Value SC-59 VCEO 80V IC 500mA SMT3 lFeatures lInner circuit l l 1)Low VCE(sat) VCE(sat)=0.2V(Typ.) (IC/IB=500mA/50mA) 2)High breakdown voltage. BVCEO=80V 3)Complements the 2SB1198K lApplication l DRIVER lPackaging specifications l Basic... See More ⇒

 0.1. Size:934K  rohm

2sd1782kfra.pdf pdf_icon

2SD1782K

2SD1782KFRA 2SD1782K Transistors AEC-Q101 Qualified Power Transistor (80V, 0.5A) 2SD1782K 2SD1782KFRA External dimensions (Unit mm) Features 1) Low VCE(sat). 2.9 0.2 VCE(sat) =0.2V(Typ.) 1.1+0.2 1.9 0.2 -0.1 (IC / IB=0.5 A / 50mA) 0.8 0.1 0.95 0.95 2) High VCEO,VCEO=80V (1) (2) 0 0.1 2SB1198KFRA 3) Complements the 2SB1198K. (3) +0.1 0.15-0.06 +0.1 0.4 -0.0... See More ⇒

 7.1. Size:92K  rohm

2sd1782.pdf pdf_icon

2SD1782K

Transistors Power Transistor (80V, 0.5A) 2SD1782K FFeatures FExternal dimensions (Units mm) 1) Low VCE(sat). VCE(sat) = 0.2V (Typ.) (IC / IB = 0.5A / 50mA) 2) High VCEO, VCEO = 80V 3) Complements the 2SB1198K. FStructure Epitaxial planar type NPN silicon transistor FAbsolute maximum ratings (Ta = 25_C) (96-222-D93) 271 Transistors 2SD1782K FElectrical characteristics (Ta = 25_... See More ⇒

 7.2. Size:84K  utc

2sd1782.pdf pdf_icon

2SD1782K

UNISONIC TECHNOLOGIES CO., LTD 2SD1782 Preliminary NPN EPITAXIAL SILICON TRANSISTOR POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1782 is an NPN silicon transistor. it uses UTC s advanced technology to provide customers with high collector-emitter breakdown voltage, low collector-emitter saturation voltage and high DC current gain, etc. FEATURES * High collector-emitte... See More ⇒

Detailed specifications: 2SCR552P, 2SCR553P, 2SCR554P, 2SCR554R, 2SD1383K, 2SD1484K, 2SD1757K, 2SD1781K, 13007, 2SD2114K, 2SD2142K, 2SD2143, 2SD2153, 2SD2226K, 2SD2351, 2SD2391, 2SD2444K

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