2N584 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N584  📄📄 

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.12 W

Tensión colector-base (Vcb): 25 V

Tensión colector-emisor (Vce): 14 V

Tensión emisor-base (Veb): 12 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 85 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 8 MHz

Capacitancia de salida (Cc): 20 pF

Ganancia de corriente contínua (hFE): 40

Encapsulados: TO1

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2N584 datasheet

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2N584

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5838 2N5839 2N5840 DESCRIPTION With TO-3 package Low collector-emitter saturation voltage APPLICATIONS For use in switching power supply applications and other inductive switching circuits. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute max

 0.2. Size:117K  inchange semiconductor
 2n5838 2n5839 2n5840.pdf pdf_icon

2N584

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5838 2N5839 2N5840 DESCRIPTION With TO-3 package Low collector saturation voltage High breakdown voltage APPLICATIONS For use in switching power supply and other inductive switching circuits. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collecto

Otros transistores... 2N5833, 2N5834, 2N5835, 2N5836, 2N5837, 2N5838, 2N5839, 2N583A, BD140, 2N5840, 2N5841, 2N5842, 2N5843, 2N5844, 2N5845, 2N5845A, 2N5846