2N584 Datasheet and Replacement
Type Designator: 2N584
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.12 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 14 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 85 °C
Transition Frequency (ft): 8 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO1
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2N584 Datasheet (PDF)
2n5838 2n5839 2n5840.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5838 2N5839 2N5840 DESCRIPTION With TO-3 package Low collector-emitter saturation voltage APPLICATIONS For use in switching power supply applications and other inductive switching circuits. PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute max
2n5838 2n5839 2n5840.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5838 2N5839 2N5840 DESCRIPTION With TO-3 package Low collector saturation voltage High breakdown voltage APPLICATIONS For use in switching power supply and other inductive switching circuits. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 Collecto
Datasheet: 2N5833 , 2N5834 , 2N5835 , 2N5836 , 2N5837 , 2N5838 , 2N5839 , 2N583A , 2SD718 , 2N5840 , 2N5841 , 2N5842 , 2N5843 , 2N5844 , 2N5845 , 2N5845A , 2N5846 .
History: 2SC999A | 2N3162 | HEPS0017 | 2N1056 | UN9217R | KT8107D2 | ECG2306
Keywords - 2N584 transistor datasheet
2N584 cross reference
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History: 2SC999A | 2N3162 | HEPS0017 | 2N1056 | UN9217R | KT8107D2 | ECG2306



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