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DTC114YEB . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DTC114YEB
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 10 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.21

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 40 V
   Corriente del colector DC máxima (Ic): 0.07 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 250 MHz
   Ganancia de corriente contínua (hfe): 68
   Paquete / Cubierta: SC-89 EMT3F SOT416FL
 

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DTC114YEB Datasheet (PDF)

 ..1. Size:152K  rohm
dtc114yeb.pdf pdf_icon

DTC114YEB

100mA / 50V Digital transistors (with built-in resistors) DTC114YEB Applications Dimensions (Unit : mm) Inverter, Interface, Driver EMT3F1.6 0.70.26 Features (3)1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors (1) (2)0

 6.1. Size:144K  motorola
dtc114yerev1.pdf pdf_icon

DTC114YEB

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby DTC114YE/DDTC114YEPreliminary Data SheetBias Resistor TransistorNPN Silicon Surface Mount Transistor with3Monolithic Bias Resistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor with a21monolithic bias network consisting of two resistors; a series base resistor and abaseemitter resis

 6.2. Size:94K  motorola
dtc114ye 69 sot416.pdf pdf_icon

DTC114YEB

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby DTC114YE/DDTC114YEPreliminary Data SheetBias Resistor TransistorNPN Silicon Surface Mount Transistor with3Monolithic Bias Resistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor with a21monolithic bias network consisting of two resistors; a series base resistor and abaseemitter resis

 6.3. Size:56K  motorola
pdtc114ye 3.pdf pdf_icon

DTC114YEB

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC114YENPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114YEFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 10 k and 47 kPIN DESCRIPTIONrespectively)1 base/input Simplification

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History: NPS2222 | BDAP36 | CL855B | KT837J | 2SA256 | 2SB448 | RT1N242U

 

 
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