All Transistors. DTC114YEB Datasheet

 

DTC114YEB Datasheet and Replacement


   Type Designator: DTC114YEB
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 0.21
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 40 V
   Maximum Collector Current |Ic max|: 0.07 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Forward Current Transfer Ratio (hFE), MIN: 68
   Noise Figure, dB: -
   Package: SC-89 EMT3F SOT416FL
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DTC114YEB Datasheet (PDF)

 ..1. Size:152K  rohm
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DTC114YEB

100mA / 50V Digital transistors (with built-in resistors) DTC114YEB Applications Dimensions (Unit : mm) Inverter, Interface, Driver EMT3F1.6 0.70.26 Features (3)1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors (1) (2)0

 6.1. Size:144K  motorola
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DTC114YEB

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby DTC114YE/DDTC114YEPreliminary Data SheetBias Resistor TransistorNPN Silicon Surface Mount Transistor with3Monolithic Bias Resistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor with a21monolithic bias network consisting of two resistors; a series base resistor and abaseemitter resis

 6.2. Size:94K  motorola
dtc114ye 69 sot416.pdf pdf_icon

DTC114YEB

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby DTC114YE/DDTC114YEPreliminary Data SheetBias Resistor TransistorNPN Silicon Surface Mount Transistor with3Monolithic Bias Resistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor with a21monolithic bias network consisting of two resistors; a series base resistor and abaseemitter resis

 6.3. Size:56K  motorola
pdtc114ye 3.pdf pdf_icon

DTC114YEB

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC114YENPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114YEFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 10 k and 47 kPIN DESCRIPTIONrespectively)1 base/input Simplification

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2SC3712 | 2SA1407E | 2N2872 | 2SA1262 | CL152-3 | T11 | NB221YX

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