DTC115EM Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DTC115EM  📄📄 

Código: 29

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 100 kOhm

Resistencia Base-Emisor R2 = 100 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 40 V

Corriente del colector DC máxima (Ic): 0.02 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Ganancia de corriente contínua (hFE): 82

Encapsulados: SC-105AA VMT3 SOT723

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DTC115EM datasheet

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DTC115EM

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MUN2236, MMUN2236L, MUN5236, DTC115EE, DTC115EM3 Digital Transistors (BRT) R1 = 100 kW, R2 = 100 kW http //onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) device and its external resistor bias network. The Bias Resistor PIN 1 R1 BASE Transistor (BRT) conta

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DTC114EM3T5G Series Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor http //onsemi.com contains a single transistor with a monolithic bias network consisting of two resistors; a series base resis

MOSTRAR MÁS

Otros transistores... DTC114EM, DTC114EUB, DTC114WE, DTC114YEB, DTC114YM, DTC114YUA, DTC114YUB, DTC115EEB, 13007, DTC123EE, DTC123EM, DTC123JEB, DTC123JM, DTC123JUB, DTC123YE, DTC124EEB, DTC124EM