DTD123YK Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DTD123YK  📄📄 

Código: F62

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 2.2 kOhm

Resistencia Base-Emisor R2 = 10 kOhm

Ratio típica de resistencia R1/R2 = 0.22

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 12 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 200 MHz

Ganancia de corriente contínua (hFE): 56

Encapsulados: SMT3 SC59

  📄📄 Copiar 

 Búsqueda de reemplazo de DTD123YK

- Selecciónⓘ de transistores por parámetros

 

DTD123YK datasheet

 ..1. Size:156K  rohm
dtd123yk.pdf pdf_icon

DTD123YK

Digital transistors (built-in resistors) DTD123YK Applications Dimensions (Unit mm) Inverter, Interface, Driver 2.9 1.1 DTD123YK 0.4 0.8 Features 1) Built-in bias resistors enable the configuration of (3) an inverter circuit without connecting external input resistors see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete (2) (1)

 0.1. Size:124K  nxp
pdtd123yk pdtd123ys.pdf pdf_icon

DTD123YK

PDTD123Y series NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k , R2 = 10 k Rev. 02 16 November 2009 Product data sheet 1. Product profile 1.1 General description 500 mA NPN Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package PNP complement NXP JEITA JEDEC PDTD123YK SOT346 SC-59A TO-236 PDTB123YK PDTD123YS[1] SOT54 SC-43A TO-92

 0.2. Size:138K  chenmko
chdtd123ykgp.pdf pdf_icon

DTD123YK

CHENMKO ENTERPRISE CO.,LTD CHDTD123YKGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 500 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-23) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabi

 7.1. Size:124K  nxp
pdtd123y.pdf pdf_icon

DTD123YK

PDTD123Y series NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k , R2 = 10 k Rev. 02 16 November 2009 Product data sheet 1. Product profile 1.1 General description 500 mA NPN Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package PNP complement NXP JEITA JEDEC PDTD123YK SOT346 SC-59A TO-236 PDTB123YK PDTD123YS[1] SOT54 SC-43A TO-92

Otros transistores... DTC143ZM, DTC143ZUB, DTC144EEB, DTC144EM, DTC144EUB, DTC144WE, DTD113ZK, DTD113ZU, 8050, DTD513ZE, DTD513ZM, DTD523YE, DTD523YM, DTD543EE, DTD543EM, DTD543XE, DTD543XM