DTD123YK Todos los transistores

 

DTD123YK Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DTD123YK
   Código: F62
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 2.2 kOhm
   Resistencia Base-Emisor R2 = 10 kOhm
   Ratio típica de resistencia R1/R2 = 0.22

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 12 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Ganancia de corriente contínua (hfe): 56
   Paquete / Cubierta: SMT3 SC59

 Búsqueda de reemplazo de transistor bipolar DTD123YK

 

Principales características: DTD123YK

 ..1. Size:156K  rohm
dtd123yk.pdf pdf_icon

DTD123YK

Digital transistors (built-in resistors) DTD123YK Applications Dimensions (Unit mm) Inverter, Interface, Driver 2.9 1.1 DTD123YK 0.4 0.8 Features 1) Built-in bias resistors enable the configuration of (3) an inverter circuit without connecting external input resistors see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete (2) (1)

 0.1. Size:124K  nxp
pdtd123yk pdtd123ys.pdf pdf_icon

DTD123YK

PDTD123Y series NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k , R2 = 10 k Rev. 02 16 November 2009 Product data sheet 1. Product profile 1.1 General description 500 mA NPN Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package PNP complement NXP JEITA JEDEC PDTD123YK SOT346 SC-59A TO-236 PDTB123YK PDTD123YS[1] SOT54 SC-43A TO-92

 0.2. Size:138K  chenmko
chdtd123ykgp.pdf pdf_icon

DTD123YK

CHENMKO ENTERPRISE CO.,LTD CHDTD123YKGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 500 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-23) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabi

 7.1. Size:124K  nxp
pdtd123y.pdf pdf_icon

DTD123YK

PDTD123Y series NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k , R2 = 10 k Rev. 02 16 November 2009 Product data sheet 1. Product profile 1.1 General description 500 mA NPN Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package PNP complement NXP JEITA JEDEC PDTD123YK SOT346 SC-59A TO-236 PDTB123YK PDTD123YS[1] SOT54 SC-43A TO-92

Otros transistores... DTC143ZM , DTC143ZUB , DTC144EEB , DTC144EM , DTC144EUB , DTC144WE , DTD113ZK , DTD113ZU , 8050 , DTD513ZE , DTD513ZM , DTD523YE , DTD523YM , DTD543EE , DTD543EM , DTD543XE , DTD543XM .

 

 
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