DTD123YK
- Даташиты. Аналоги. Основные параметры
Наименование производителя: DTD123YK
Маркировка: F62
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 2.2 kOhm
Встроенный резистор цепи смещения R2 = 10 kOhm
Соотношение сопротивлений R1/R2 = 0.22
Максимальная рассеиваемая мощность (Pc): 0.2
W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 12
V
Макcимальный постоянный ток коллектора (Ic): 0.5
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 200
MHz
Статический коэффициент передачи тока (hfe): 56
Корпус транзистора:
SMT3
SC59
Аналоги (замена) для DTD123YK
DTD123YK
Datasheet (PDF)
..1. Size:156K rohm
dtd123yk.pdf 

Digital transistors (built-in resistors) DTD123YK Applications Dimensions (Unit mm) Inverter, Interface, Driver 2.9 1.1 DTD123YK 0.4 0.8 Features 1) Built-in bias resistors enable the configuration of (3) an inverter circuit without connecting external input resistors see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete (2) (1)
0.1. Size:124K nxp
pdtd123yk pdtd123ys.pdf 

PDTD123Y series NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k , R2 = 10 k Rev. 02 16 November 2009 Product data sheet 1. Product profile 1.1 General description 500 mA NPN Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package PNP complement NXP JEITA JEDEC PDTD123YK SOT346 SC-59A TO-236 PDTB123YK PDTD123YS[1] SOT54 SC-43A TO-92
0.2. Size:138K chenmko
chdtd123ykgp.pdf 

CHENMKO ENTERPRISE CO.,LTD CHDTD123YKGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 500 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-23) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabi
7.1. Size:124K nxp
pdtd123y.pdf 

PDTD123Y series NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k , R2 = 10 k Rev. 02 16 November 2009 Product data sheet 1. Product profile 1.1 General description 500 mA NPN Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package PNP complement NXP JEITA JEDEC PDTD123YK SOT346 SC-59A TO-236 PDTB123YK PDTD123YS[1] SOT54 SC-43A TO-92
7.2. Size:70K diodes
ddtd123yc.pdf 

DDTD (xxxx) C NPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Epitaxial Planar Die Construction Case SOT-23 Complementary PNP Types Available (DDTB) Case Material Molded Plastic, Green Molding Compound, Note 3. UL Flammability Classification Rating 94V-0 Built-In Biasing Re
7.3. Size:167K diodes
ddtd123yu.pdf 

DDTD (xxxx) U NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-323 Complementary PNP Types Available (DDTB) Dim Min Max Built-In Biasing Resistors, R1, R2 A 0.25 0.40 Lead Free/RoHS Compliant Version (Note 2) B 1.15 1.35 B C "Green" Device, Note 3 and 4 C 2.00 2.20 Mechanical Data D 0.65 Nominal E 0.
7.4. Size:131K utc
dtd123y.pdf 

UNISONIC TECHNOLOGIES CO., LTD DTD123Y NPN SILICON TRANSISTOR DIGITAL TRANSISTORS 3 3 (BUILT-IN RESISTORS) 1 1 2 2 FEATURES SOT-323 SOT-23 * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input. EQUIVALENT CIRCUIT 1 TO-92 ORDERING INFORMATION Ordering Number
7.5. Size:1033K wietron
dtd123y.pdf 

DTD123Y Bias Resistor Transistor NPN Silicon COLLECTOR 3 3 P b Lead(Pb)-Free R 1 1 1 BASE R 2 2 2 EMITTER SOT-23 Absolute maximum ratings (TA = 25 C) Parameter Symbol Limits Unit Supply voltage Vcc 50 V -5 +12 Input voltage VIN V Output current IC 500 mA Power dissipation Pd 200 mW Junction temperature Tj 150 Storage temperature Tstg -55 +150 Electrical characteristics
7.6. Size:369K lrc
ldtd123ylt1g.pdf 

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor LDTD123YLT1G with Monolithic Bias Resistor Network S-LDTD123YLT1G Applications Inverter, Interface, Driver Features 3 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 1 2) The bias res
7.7. Size:350K lrc
ldtd123yet1g.pdf 

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor LDTD123YET1G with Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1 resistors (see equivalent circuit). 2 2) The bias resistors consist
7.8. Size:369K lrc
ldtd123ylt1g ldtd123ylt3g.pdf 

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor LDTD123YLT1G with Monolithic Bias Resistor Network S-LDTD123YLT1G Applications Inverter, Interface, Driver Features 3 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 1 2) The bias res
7.9. Size:319K kexin
dtd123yua.pdf 

SMD Type Transistors Digital Transistors DTD123YUA (KDTD123YUA) Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.They also have the advantage of almost complet
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