2SC3795B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon NPN Power Transistor 2SC3795BDESCRIPTION Collector-Base Breakdown Voltage-: V = 1000V(Min.)(BR)CBOLow Collector Saturation VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALU

Power Transistors2SC3795, 2SC3795ASilicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingFeaturesHigh-speed switchingUnit: mm High collector to base voltage VCBO10.0 0.2 4.2 0.2Low collector to emitter saturation voltage VCE(sat)5.5 0.2 2.7 0.2Full-pack package which can be installed to the heat sink withone screwAbsolute Maximum

isc Silicon NPN Power Transistor 2SC3795DESCRIPTION Collector-Base Breakdown Voltage-: V = 800V(Min.)(BR)CBOLow Collector Saturation VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3795 2SC3795A DESCRIPTION With TO-220Fa package High breakdown voltage High speed switching Low collector saturation voltage APPLICATIONS For high breakdown voltate ,high-speed switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) an