2SC3795B Datasheet PDF and Equivalents Search

 ..1. Size:214K  inchange semiconductor

 2sc3795b.pdf

isc Silicon NPN Power Transistor 2SC3795B DESCRIPTION Collector-Base Breakdown Voltage- V = 1000V(Min.) (BR)CBO Low Collector Saturation Voltage High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALU... See More ⇒

 7.1. Size:63K  panasonic

 2sc3795.pdf

Power Transistors 2SC3795, 2SC3795A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Features High-speed switching Unit mm High collector to base voltage VCBO 10.0 0.2 4.2 0.2 Low collector to emitter saturation voltage VCE(sat) 5.5 0.2 2.7 0.2 Full-pack package which can be installed to the heat sink with one screw Absolute Maximum... See More ⇒

 7.2. Size:211K  inchange semiconductor

 2sc3795.pdf

isc Silicon NPN Power Transistor 2SC3795 DESCRIPTION Collector-Base Breakdown Voltage- V = 800V(Min.) (BR)CBO Low Collector Saturation Voltage High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE ... See More ⇒

 7.3. Size:146K  inchange semiconductor

 2sc3795 2sc3795a.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3795 2SC3795A DESCRIPTION With TO-220Fa package High breakdown voltage High speed switching Low collector saturation voltage APPLICATIONS For high breakdown voltate ,high-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) an... See More ⇒