2SC3795B - параметры, поиск аналогов, даташиты транзистора

2SC3795B Datasheet (PDF)

..1. Size:214K inchange semiconductor
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isc Silicon NPN Power Transistor 2SC3795BDESCRIPTION Collector-Base Breakdown Voltage-: V = 1000V(Min.)(BR)CBOLow Collector Saturation VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALU

7.1. Size:63K panasonic
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Power Transistors2SC3795, 2SC3795ASilicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingFeaturesHigh-speed switchingUnit: mm High collector to base voltage VCBO10.0 0.2 4.2 0.2Low collector to emitter saturation voltage VCE(sat)5.5 0.2 2.7 0.2Full-pack package which can be installed to the heat sink withone screwAbsolute Maximum

7.2. Size:211K inchange semiconductor
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isc Silicon NPN Power Transistor 2SC3795DESCRIPTION Collector-Base Breakdown Voltage-: V = 800V(Min.)(BR)CBOLow Collector Saturation VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE

7.3. Size:146K inchange semiconductor
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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3795 2SC3795A DESCRIPTION With TO-220Fa package High breakdown voltage High speed switching Low collector saturation voltage APPLICATIONS For high breakdown voltate ,high-speed switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) an

Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .