2SC4507 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

JMnic Product Specification Silicon NPN Power Transistors 2SC4507 DESCRIPTION With TO-220F package High breakdown voltage High speed switching performance APPLICATIONS For switching regulator and general purpose power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum rating

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4507 DESCRIPTION Fast switching speed Silicon NPN planar diffused planar transistor 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio temperature compensation and general purpose ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI

Ordering number EN3160A NPN Epitaxial Planar Silicon Transistor 2SC4504 High-Definition CRT Display Video Output Driver Applications Features Package Dimensions High fT (fT=2.2GHz typ) unit mm Large current (IC=300mA) 2038A Adoption of FBET process. [2SC4504] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Base 2 Collector 0.75 3 Emitter SANYO PCP (Bottom vi

2SA1759 Transistors Transistors 2SC4505 / 2SC4620 (96-97-A324) (96-178-C300) 305

Transistor 2SC4502 Silicon NPN epitaxial planer type For mtermediate frequency amplification Unit mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High transition frequency fT. Large collector power dissipation PC. 0.65 max. Allowing supply with the radial taping. +0.1 Absolute Maximum Ratings (Ta=25 C) 0.45 0.05 2.5 0.5 2.5 0.5 Parameter Symbol Rating

Transistor 2SC4502 Silicon NPN epitaxial planer type For mtermediate frequency amplification Unit mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High transition frequency fT. Large collector power dissipation PC. 0.65 max. Allowing supply with the radial taping. +0.1 Absolute Maximum Ratings (Ta=25 C) 0.45 0.05 2.5 0.5 2.5 0.5 Parameter Symbol Rating

2SC4501(L)/(S) Silicon NPN Epitaxial Application High gain amplifier and medium speed switching Outline DPAK 4 2, 4 4 1 1 2 1. Base 3 2. Collector 3. Emitter S Type 12 4. Collector 3 3 L Type 2SC4501(L)/(S) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 30 V Emitter to base volta

2SC4500(L)/(S) Silicon NPN Epitaxial Application Low frequency amplifier Outline DPAK 4 2, 4 4 1 1 2 1. Base 3 2. Collector 3. Emitter S Type 12 4. Collector 3 3 L Type 2SC4500(L)/(S) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7V Collector curr

JMnic Product Specification Silicon NPN Power Transistors 2SC4508 DESCRIPTION With TO-220F package High breakdown voltage High speed switching performance APPLICATIONS For switching regulator and general purpose power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum rating

JMnic Silicon NPN Power Transistors 2SC4509 DESCRIPTION With TO-3PML package High voltage ,high speed switching Low collector saturation voltage APPLICATIONS Switching regulators DC-DC convertors Solid state relay General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolu

SMD Type Transistors NPN Transistors 2SC4505 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=0.1A Collector Emitter Voltage VCEO=400V 0.42 0.1 0.46 0.1 Complements to 2SA1759 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collector - Emitter Voltage VCEO 4

SMD Type Transistors NPN Transistors 2SC4504 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=0.3A Collector Emitter Voltage VCEO=20V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VE

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4508 DESCRIPTION Fast switching speed Silicon NPN planar diffused planar transistor 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio temperature compensation and general purpose ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4509 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V(Min.) CEO(SUS) High Switching Speed High Reliability Low Collector Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators DC-DC conver