2SC4507 Datasheet and Replacement

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4507 DESCRIPTION With TO-220F package High breakdown voltage High speed switching performance APPLICATIONS For switching regulator and general purpose power amplifier applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum rating

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4507DESCRIPTIONFast switching speedSilicon NPN planar diffused planar transistor100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio temperature compensation and general purposeABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

Ordering number:EN3160ANPN Epitaxial Planar Silicon Transistor2SC4504High-Definition CRT DisplayVideo Output Driver ApplicationsFeatures Package Dimensions High fT (fT=2.2GHz typ)unit:mm Large current (IC=300mA)2038A Adoption of FBET process.[2SC4504]4.51.51.60.4 0.53 2 10.41.53.01 : Base2 : Collector0.753 : EmitterSANYO : PCP(Bottom vi

2SA1759TransistorsTransistors2SC4505 / 2SC4620(96-97-A324)(96-178-C300)305

Transistor2SC4502Silicon NPN epitaxial planer typeFor mtermediate frequency amplificationUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh transition frequency fT.Large collector power dissipation PC. 0.65 max.Allowing supply with the radial taping.+0.1 Absolute Maximum Ratings (Ta=25C)0.450.052.5 0.5 2.5 0.5Parameter Symbol Rating

Transistor2SC4502Silicon NPN epitaxial planer typeFor mtermediate frequency amplificationUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh transition frequency fT.Large collector power dissipation PC. 0.65 max.Allowing supply with the radial taping.+0.1 Absolute Maximum Ratings (Ta=25C)0.450.052.5 0.5 2.5 0.5Parameter Symbol Rating

2SC4501(L)/(S)Silicon NPN EpitaxialApplicationHigh gain amplifier and medium speed switchingOutlineDPAK42, 441121. Base 3 2. Collector 3. Emitter S Type 124. Collector33L Type2SC4501(L)/(S)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 30 VEmitter to base volta

2SC4500(L)/(S)Silicon NPN EpitaxialApplicationLow frequency amplifierOutlineDPAK42, 441121. Base3 2. Collector3. EmitterS Type 124. Collector33L Type2SC4500(L)/(S)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7VCollector curr

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4508 DESCRIPTION With TO-220F package High breakdown voltage High speed switching performance APPLICATIONS For switching regulator and general purpose power amplifier applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum rating

JMnic Silicon NPN Power Transistors 2SC4509 DESCRIPTION With TO-3PML package High voltage ,high speed switching Low collector saturation voltage APPLICATIONS Switching regulators DC-DC convertors Solid state relay General purpose power amplifiers PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolu

SMD Type TransistorsNPN Transistors2SC4505SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.1A Collector Emitter Voltage VCEO=400V0.42 0.10.46 0.1 Complements to 2SA17591.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collector - Emitter Voltage VCEO 4

SMD Type TransistorsNPN Transistors2SC4504SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.3A Collector Emitter Voltage VCEO=20V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VE

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4508DESCRIPTIONFast switching speedSilicon NPN planar diffused planar transistor100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio temperature compensation and general purposeABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4509DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V(Min.)CEO(SUS)High Switching SpeedHigh ReliabilityLow Collector Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC conver