2SC4770
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC4770
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 60
W
Tensión colector-base (Vcb): 1500
V
Tensión colector-emisor (Vce): 800
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 7
A
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 3
Paquete / Cubierta:
TO3PML
Búsqueda de reemplazo de transistor bipolar 2SC4770
2SC4770
Datasheet (PDF)
..1. Size:98K sanyo
2sc4770.pdf
Ordering number:EN3666ANPN Triple Diffused Planar Silicon Transistor2SC4770Ultrahigh-Definition Color DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2039D High reliability (Adoption of HVP process).[2SC4770] Adoption of MBIT process.16.05.63.43.12.82
..2. Size:51K jmnic
2sc4770.pdf
Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC4770 DESCRIPTION With TO-3PML package High breakdown voltage, high reliability. High speed APPLICATIONS Ultrahigh-definition color display Horizontal deflection output applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PML) and symbol Maximum abso
..3. Size:194K inchange semiconductor
2sc4770.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4770DESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching SpeedHigh Reliability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-definition color display horizontal deflectionoutput applicationsABSOLUTE MAXI
8.1. Size:76K rohm
2sc4774 2sc4713k.pdf
2SC4774 / 2SC4713K Transistors High frequency amplifier transistor, RF switching (6V, 50mA) 2SC4774 / 2SC4713K Features 2SC47741) Very low output-on resistance (Ron). 2) Low capacitance. 1.252.1 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits UnitCollector-base voltage VCBO 12 VCollector-emitter voltage VCEO 6 V0.1Min.Emitter-base voltage VEBO 3 VE
8.2. Size:1405K rohm
2sc4774.pdf
2SC4774DatasheetHigh frequency amplifier transistor, RF switching (6V, 50mA)lOutlinel SOT-323 Parameter Value SC-70 VCEO6VIC50mAUMT3 lFeatures lInner circuitl l1)Very Low output-on resistance (Ron).2)Low capacitance.lApplicationlHIGH FREQUENCY AMPLIFIER
8.3. Size:234K utc
2sc4774.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC4774 NPN SILICON TRANSISTOR HIGH FREQUENCY AMPLIFIER TRANSISTOR, RF SWITCHING (6V, 50mA) FEATURES * Very low output-on resistance (RON). * Low capacitance. ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 32SC4774L-AL3-R 2SC4774G-AL3-R SOT-323 E B C Tape Reel MARKING C47L: Lead Free
8.4. Size:118K chenmko
2sc4774gp.pdf
CHENMKO ENTERPRISE CO.,LTD2SC4774GPSURFACE MOUNT High frequency amplifier TransistorVOLTAGE 6 Volts CURRENT 50 mAmpereAPPLICATION* Small Signal Amplifier .FEATURESC-70/SOT-323* Surface mount package. (SC-70/SOT-323)* Low saturation voltage VCE(sat)=0.3V(max.)* Low cob. Cob=1.0pF(Typ.)* PC= 200mW (mounted on ceramic substrate).* High saturation current capability.0.65
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