All Transistors. 2SC4770 Datasheet

 

2SC4770 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC4770
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 60 W
   Maximum Collector-Base Voltage |Vcb|: 1500 V
   Maximum Collector-Emitter Voltage |Vce|: 800 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 7 A
   Forward Current Transfer Ratio (hFE), MIN: 3
   Noise Figure, dB: -
   Package: TO3PML

 2SC4770 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC4770 Datasheet (PDF)

 ..1. Size:98K  sanyo
2sc4770.pdf

2SC4770 2SC4770

Ordering number:EN3666ANPN Triple Diffused Planar Silicon Transistor2SC4770Ultrahigh-Definition Color DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2039D High reliability (Adoption of HVP process).[2SC4770] Adoption of MBIT process.16.05.63.43.12.82

 ..2. Size:51K  jmnic
2sc4770.pdf

2SC4770 2SC4770

Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC4770 DESCRIPTION With TO-3PML package High breakdown voltage, high reliability. High speed APPLICATIONS Ultrahigh-definition color display Horizontal deflection output applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PML) and symbol Maximum abso

 ..3. Size:194K  inchange semiconductor
2sc4770.pdf

2SC4770 2SC4770

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4770DESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching SpeedHigh Reliability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-definition color display horizontal deflectionoutput applicationsABSOLUTE MAXI

 8.1. Size:76K  rohm
2sc4774 2sc4713k.pdf

2SC4770 2SC4770

2SC4774 / 2SC4713K Transistors High frequency amplifier transistor, RF switching (6V, 50mA) 2SC4774 / 2SC4713K Features 2SC47741) Very low output-on resistance (Ron). 2) Low capacitance. 1.252.1 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits UnitCollector-base voltage VCBO 12 VCollector-emitter voltage VCEO 6 V0.1Min.Emitter-base voltage VEBO 3 VE

 8.2. Size:1405K  rohm
2sc4774.pdf

2SC4770 2SC4770

2SC4774DatasheetHigh frequency amplifier transistor, RF switching (6V, 50mA)lOutlinel SOT-323 Parameter Value SC-70 VCEO6VIC50mAUMT3 lFeatures lInner circuitl l1)Very Low output-on resistance (Ron).2)Low capacitance.lApplicationlHIGH FREQUENCY AMPLIFIER

 8.3. Size:234K  utc
2sc4774.pdf

2SC4770 2SC4770

UNISONIC TECHNOLOGIES CO., LTD 2SC4774 NPN SILICON TRANSISTOR HIGH FREQUENCY AMPLIFIER TRANSISTOR, RF SWITCHING (6V, 50mA) FEATURES * Very low output-on resistance (RON). * Low capacitance. ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 32SC4774L-AL3-R 2SC4774G-AL3-R SOT-323 E B C Tape Reel MARKING C47L: Lead Free

 8.4. Size:118K  chenmko
2sc4774gp.pdf

2SC4770 2SC4770

CHENMKO ENTERPRISE CO.,LTD2SC4774GPSURFACE MOUNT High frequency amplifier TransistorVOLTAGE 6 Volts CURRENT 50 mAmpereAPPLICATION* Small Signal Amplifier .FEATURESC-70/SOT-323* Surface mount package. (SC-70/SOT-323)* Low saturation voltage VCE(sat)=0.3V(max.)* Low cob. Cob=1.0pF(Typ.)* PC= 200mW (mounted on ceramic substrate).* High saturation current capability.0.65

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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