Биполярный транзистор 2SC4770 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC4770
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 60 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 7 A
Статический коэффициент передачи тока (hfe): 3
Корпус транзистора: TO3PML
2SC4770 Datasheet (PDF)
2sc4770.pdf
Ordering number:EN3666ANPN Triple Diffused Planar Silicon Transistor2SC4770Ultrahigh-Definition Color DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2039D High reliability (Adoption of HVP process).[2SC4770] Adoption of MBIT process.16.05.63.43.12.82
2sc4770.pdf
Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC4770 DESCRIPTION With TO-3PML package High breakdown voltage, high reliability. High speed APPLICATIONS Ultrahigh-definition color display Horizontal deflection output applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PML) and symbol Maximum abso
2sc4770.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4770DESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching SpeedHigh Reliability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-definition color display horizontal deflectionoutput applicationsABSOLUTE MAXI
2sc4774 2sc4713k.pdf
2SC4774 / 2SC4713K Transistors High frequency amplifier transistor, RF switching (6V, 50mA) 2SC4774 / 2SC4713K Features 2SC47741) Very low output-on resistance (Ron). 2) Low capacitance. 1.252.1 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits UnitCollector-base voltage VCBO 12 VCollector-emitter voltage VCEO 6 V0.1Min.Emitter-base voltage VEBO 3 VE
2sc4774.pdf
2SC4774DatasheetHigh frequency amplifier transistor, RF switching (6V, 50mA)lOutlinel SOT-323 Parameter Value SC-70 VCEO6VIC50mAUMT3 lFeatures lInner circuitl l1)Very Low output-on resistance (Ron).2)Low capacitance.lApplicationlHIGH FREQUENCY AMPLIFIER
2sc4774.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC4774 NPN SILICON TRANSISTOR HIGH FREQUENCY AMPLIFIER TRANSISTOR, RF SWITCHING (6V, 50mA) FEATURES * Very low output-on resistance (RON). * Low capacitance. ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 32SC4774L-AL3-R 2SC4774G-AL3-R SOT-323 E B C Tape Reel MARKING C47L: Lead Free
2sc4774gp.pdf
CHENMKO ENTERPRISE CO.,LTD2SC4774GPSURFACE MOUNT High frequency amplifier TransistorVOLTAGE 6 Volts CURRENT 50 mAmpereAPPLICATION* Small Signal Amplifier .FEATURESC-70/SOT-323* Surface mount package. (SC-70/SOT-323)* Low saturation voltage VCE(sat)=0.3V(max.)* Low cob. Cob=1.0pF(Typ.)* PC= 200mW (mounted on ceramic substrate).* High saturation current capability.0.65
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050