2SC5150 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5150DESCRIPTIONHigh Breakdown Voltage-: V = 1700V (Min)CBOHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display,color TVHigh speed switchi

Ordering number:EN4802NPN Epitaxial Planar Silicon Transistor2SC5155Low-FrequencyGeneral-Purpose Amplifier, ApplicationsApplications Package Dimensions Various drivers. unit:mm2045BFeatures [2SC5155]6.5 High current capacity. 2.35.00.54 Adoption of MBIT process. High DC current gain. Low collector-to-emitter saturation voltage. High VEBO.0.8

JMnic Product Specification Silicon NPN Power Transistors 2SC515 DESCRIPTION With TO-66 package High breakdown voltage APPLICATIONS For use in line-operated color TV chroma output circuits and sound output circuits PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PA

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC515DESCRIPTIONWith TO-66 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSDesigned for use in line-operated color TV chromaoutput circuits and sound output circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE