2SC5150 Datasheet. Specs and Replacement

Type Designator: 2SC5150  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 1700 V

Maximum Collector-Emitter Voltage |Vce|: 700 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Electrical Characteristics

Transition Frequency (ft): 2 MHz

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO3PHIS

 2SC5150 Substitution

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2SC5150 datasheet

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2SC5150

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 ..2. Size:180K  inchange semiconductor

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2SC5150

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5150 DESCRIPTION High Breakdown Voltage- V = 1700V (Min) CBO High Switching Speed Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for high resolution display, color TV High speed switchi... See More ⇒

 8.1. Size:198K  toshiba

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2SC5150

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 8.2. Size:115K  sanyo

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2SC5150

Ordering number EN4802 NPN Epitaxial Planar Silicon Transistor 2SC5155 Low-Frequency General-Purpose Amplifier, Applications Applications Package Dimensions Various drivers. unit mm 2045B Features [2SC5155] 6.5 High current capacity. 2.3 5.0 0.5 4 Adoption of MBIT process. High DC current gain. Low collector-to-emitter saturation voltage. High VEBO. 0.8... See More ⇒

Detailed specifications: 2SC5003, 2SC5042, 2SC5048, 2SC5124, 2SC5129, 2SC5143, 2SC5148, 2SC5149, 2SB817, 2SC5241, 2SC5280, 2SC5296, 2SC5297, 2SC5299, 2SC5339, 2SC5382, 2SC5386

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