All Transistors. 2SC5150 Datasheet

 

2SC5150 Datasheet and Replacement


   Type Designator: 2SC5150
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 1700 V
   Maximum Collector-Emitter Voltage |Vce|: 700 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Transition Frequency (ft): 2 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO3PHIS
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2SC5150 Datasheet (PDF)

 ..1. Size:210K  toshiba
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2SC5150

 ..2. Size:180K  inchange semiconductor
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2SC5150

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5150DESCRIPTIONHigh Breakdown Voltage-: V = 1700V (Min)CBOHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display,color TVHigh speed switchi

 8.1. Size:198K  toshiba
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2SC5150

 8.2. Size:115K  sanyo
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2SC5150

Ordering number:EN4802NPN Epitaxial Planar Silicon Transistor2SC5155Low-FrequencyGeneral-Purpose Amplifier, ApplicationsApplications Package Dimensions Various drivers. unit:mm2045BFeatures [2SC5155]6.5 High current capacity. 2.35.00.54 Adoption of MBIT process. High DC current gain. Low collector-to-emitter saturation voltage. High VEBO.0.8

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: NKT281

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